Abstract
Artificial neural networks (ANNs) are widely used in numerous artificial intelligence-based applications. However, the significant amount of data transferred between computing units and storage has limited the widespread deployment of ANN for the artificial intelligence of things (AIoT) and power-constrained device applications. Therefore, among various ANN algorithms, quantized neural networks (QNNs) have garnered considerable attention because they require fewer computational resources with minimal energy consumption. Herein, an oxide-based ternary charge-trap transistor (CTT) that provides three discrete states and non-volatile memory characteristics are introduced, which are desirable for QNN computing. By employing a differential pair of ternary CTTs, an artificial synaptic segregation with multilevel quantized values for QNNs is demostrated. The approach establishes a platform that combines the advantages of multiple states and robustness to noise for in-memory computing to achieve reliable QNN performance in hardware, thereby facilitating the development of energy-efficient AIoT.
| Original language | English |
|---|---|
| Article number | 2300303 |
| Journal | Advanced Electronic Materials |
| Volume | 9 |
| Issue number | 11 |
| DOIs | |
| State | Published - 2023.11 |
Keywords
- artificial intelligence
- charge-trap transistors
- oxide thin-film transistors
- quantized neural networks
- ternary transistors
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