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Quantized Neural Network via Synaptic Segregation Based on Ternary Charge-Trap Transistors

  • Yongmin Baek
  • , Byungjoon Bae
  • , Jeongyong Yang
  • , Doeon Lee
  • , Hee Sung Lee
  • , Minseong Park
  • , Taegeon Kim
  • , Sihwan Kim
  • , Bo In Park
  • , Geonwook Yoo*
  • , Kyusang Lee*
  • *Corresponding author for this work
  • University of Virginia
  • Soongsil University
  • Massachusetts Institute of Technology

Research output: Contribution to journalJournal articlepeer-review

Abstract

Artificial neural networks (ANNs) are widely used in numerous artificial intelligence-based applications. However, the significant amount of data transferred between computing units and storage has limited the widespread deployment of ANN for the artificial intelligence of things (AIoT) and power-constrained device applications. Therefore, among various ANN algorithms, quantized neural networks (QNNs) have garnered considerable attention because they require fewer computational resources with minimal energy consumption. Herein, an oxide-based ternary charge-trap transistor (CTT) that provides three discrete states and non-volatile memory characteristics are introduced, which are desirable for QNN computing. By employing a differential pair of ternary CTTs, an artificial synaptic segregation with multilevel quantized values for QNNs is demostrated. The approach establishes a platform that combines the advantages of multiple states and robustness to noise for in-memory computing to achieve reliable QNN performance in hardware, thereby facilitating the development of energy-efficient AIoT.

Original languageEnglish
Article number2300303
JournalAdvanced Electronic Materials
Volume9
Issue number11
DOIs
StatePublished - 2023.11

Keywords

  • artificial intelligence
  • charge-trap transistors
  • oxide thin-film transistors
  • quantized neural networks
  • ternary transistors

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