Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films

Tae Youb Kim; Nae Man Park; Kyung Hyun Kim; Young Woo Ok; Tae Yeon Seong; Cheol Jong Choi; Gun Yong Sung

doi:10.1557/proc-817-l4.3

Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films

Tae Youb Kim^*
, Nae Man Park
, Kyung Hyun Kim
, Young Woo Ok
, Tae Yeon Seong
, Cheol Jong Choi
, Gun Yong Sung

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Gwangju Institute of Science and Technology
Samsung

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Silicon nanocrystals were in situ grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV) = 1.16 + 11.8/d² is an evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.

Original language	English
Pages (from-to)	121-126
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	817
DOIs	https://doi.org/10.1557/proc-817-l4.3
State	Published - 2004
Event	New Materials for Microphotonics - San Francisco, CA, United States Duration: 2004.04.13 → 2004.04.15

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@article{9c6d67ea52f14edeb8279298f53d78b1,

title = "Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films",

abstract = "Silicon nanocrystals were in situ grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV) = 1.16 + 11.8/d2 is an evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.",

author = "Kim, \{Tae Youb\} and Park, \{Nae Man\} and Kim, \{Kyung Hyun\} and Ok, \{Young Woo\} and Seong, \{Tae Yeon\} and Choi, \{Cheol Jong\} and Sung, \{Gun Yong\}",

year = "2004",

doi = "10.1557/proc-817-l4.3",

language = "English",

volume = "817",

pages = "121--126",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "New Materials for Microphotonics ; Conference date: 13-04-2004 Through 15-04-2004",

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TY - JOUR

T1 - Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films

AU - Kim, Tae Youb

AU - Park, Nae Man

AU - Kim, Kyung Hyun

AU - Ok, Young Woo

AU - Seong, Tae Yeon

AU - Choi, Cheol Jong

AU - Sung, Gun Yong

PY - 2004

Y1 - 2004

N2 - Silicon nanocrystals were in situ grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV) = 1.16 + 11.8/d2 is an evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.

AB - Silicon nanocrystals were in situ grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV) = 1.16 + 11.8/d2 is an evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.

UR - https://www.scopus.com/pages/publications/5544297891

U2 - 10.1557/proc-817-l4.3

DO - 10.1557/proc-817-l4.3

M3 - Conference article

AN - SCOPUS:5544297891

SN - 0272-9172

VL - 817

SP - 121

EP - 126

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - New Materials for Microphotonics

Y2 - 13 April 2004 through 15 April 2004

ER -

Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films

Abstract

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