Quasi-MMIC High Power Amplifier with Silicon IPD Matching Network

Junhyung Jeong; Phirun Kim; Phanam Pech; Yongchae Jeong; Sangmin Lee

doi:10.23919/EuMC.2018.8541724

Quasi-MMIC High Power Amplifier with Silicon IPD Matching Network

Junhyung Jeong
, Phirun Kim
, Phanam Pech
, Yongchae Jeong
, Sangmin Lee

Division of Electronic Engineering

Research output: Contribution to conference › Conference paper › peer-review

6 Scopus citations

Abstract

In this paper, the quasi-monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) with silicon integrated passive device (IPD) matching network is proposed. The proposed quasi-MMIC HPA consists of commercial GaN transistor power cell and IPD matching network using silicon substrate. The proposed quasi-MMIC HPA can achieve similar output power and efficiency characteristics compared with the conventional MMIC HPAs. Moreover, the manufacturing cost can be reduced due to the silicon substrate process. For experimental validation, the proposed quasi-MMIC HPA was designed and fabricated at the 8.5 GHz for radar application. The measurement results shows that the output power and drain efficiency at saturation point are 48.5 dBm (70.8W) and 45.5%, respectively, with pulse signal test (100 usec pulse width and 10%duty.

Original language	English
Title of host publication	2018 48th European Microwave Conference, EuMC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	340-343
Number of pages	4
ISBN (Electronic)	9782874870514
DOIs	https://doi.org/10.23919/EuMC.2018.8541724
State	Published - 2018.11.20
Event	48th European Microwave Conference, EuMC 2018 - Madrid, Spain Duration: 2018.09.25 → 2018.09.27

Publication series

Name	2018 48th European Microwave Conference, EuMC 2018

Conference

Conference	48th European Microwave Conference, EuMC 2018
Country/Territory	Spain
City	Madrid
Period	18.09.25 → 18.09.27

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

high resistivity silicon
integrated passive device matching network
internally matched
power amplifier
quasi-MMIC
radar

Quacquarelli Symonds(QS) Subject Topics

Computer Science & Information Systems
Physics & Astronomy

Access to Document

10.23919/EuMC.2018.8541724

Cite this

@inproceedings{6ad8d84d84584f518823b1c689ac1305,

title = "Quasi-MMIC High Power Amplifier with Silicon IPD Matching Network",

abstract = "In this paper, the quasi-monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) with silicon integrated passive device (IPD) matching network is proposed. The proposed quasi-MMIC HPA consists of commercial GaN transistor power cell and IPD matching network using silicon substrate. The proposed quasi-MMIC HPA can achieve similar output power and efficiency characteristics compared with the conventional MMIC HPAs. Moreover, the manufacturing cost can be reduced due to the silicon substrate process. For experimental validation, the proposed quasi-MMIC HPA was designed and fabricated at the 8.5 GHz for radar application. The measurement results shows that the output power and drain efficiency at saturation point are 48.5 dBm (70.8W) and 45.5\%, respectively, with pulse signal test (100 usec pulse width and 10\%duty.",

keywords = "high resistivity silicon, integrated passive device matching network, internally matched, power amplifier, quasi-MMIC, radar",

author = "Junhyung Jeong and Phirun Kim and Phanam Pech and Yongchae Jeong and Sangmin Lee",

note = "Publisher Copyright: {\textcopyright} 2018 European Microwave Association.; 48th European Microwave Conference, EuMC 2018 ; Conference date: 25-09-2018 Through 27-09-2018",

year = "2018",

month = nov,

day = "20",

doi = "10.23919/EuMC.2018.8541724",

language = "English",

series = "2018 48th European Microwave Conference, EuMC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "340--343",

booktitle = "2018 48th European Microwave Conference, EuMC 2018",

}

Jeong, J, Kim, P, Pech, P, Jeong, Y & Lee, S 2018, Quasi-MMIC High Power Amplifier with Silicon IPD Matching Network. in 2018 48th European Microwave Conference, EuMC 2018., 8541724, 2018 48th European Microwave Conference, EuMC 2018, Institute of Electrical and Electronics Engineers Inc., pp. 340-343, 48th European Microwave Conference, EuMC 2018, Madrid, Spain, 18.09.25. https://doi.org/10.23919/EuMC.2018.8541724

Quasi-MMIC High Power Amplifier with Silicon IPD Matching Network. / Jeong, Junhyung; Kim, Phirun; Pech, Phanam et al.
2018 48th European Microwave Conference, EuMC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 340-343 8541724 (2018 48th European Microwave Conference, EuMC 2018).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Quasi-MMIC High Power Amplifier with Silicon IPD Matching Network

AU - Jeong, Junhyung

AU - Kim, Phirun

AU - Pech, Phanam

AU - Jeong, Yongchae

AU - Lee, Sangmin

PY - 2018/11/20

Y1 - 2018/11/20

N2 - In this paper, the quasi-monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) with silicon integrated passive device (IPD) matching network is proposed. The proposed quasi-MMIC HPA consists of commercial GaN transistor power cell and IPD matching network using silicon substrate. The proposed quasi-MMIC HPA can achieve similar output power and efficiency characteristics compared with the conventional MMIC HPAs. Moreover, the manufacturing cost can be reduced due to the silicon substrate process. For experimental validation, the proposed quasi-MMIC HPA was designed and fabricated at the 8.5 GHz for radar application. The measurement results shows that the output power and drain efficiency at saturation point are 48.5 dBm (70.8W) and 45.5%, respectively, with pulse signal test (100 usec pulse width and 10%duty.

AB - In this paper, the quasi-monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) with silicon integrated passive device (IPD) matching network is proposed. The proposed quasi-MMIC HPA consists of commercial GaN transistor power cell and IPD matching network using silicon substrate. The proposed quasi-MMIC HPA can achieve similar output power and efficiency characteristics compared with the conventional MMIC HPAs. Moreover, the manufacturing cost can be reduced due to the silicon substrate process. For experimental validation, the proposed quasi-MMIC HPA was designed and fabricated at the 8.5 GHz for radar application. The measurement results shows that the output power and drain efficiency at saturation point are 48.5 dBm (70.8W) and 45.5%, respectively, with pulse signal test (100 usec pulse width and 10%duty.

KW - high resistivity silicon

KW - integrated passive device matching network

KW - internally matched

KW - power amplifier

KW - quasi-MMIC

KW - radar

UR - https://www.scopus.com/pages/publications/85059811633

U2 - 10.23919/EuMC.2018.8541724

DO - 10.23919/EuMC.2018.8541724

M3 - Conference paper

AN - SCOPUS:85059811633

T3 - 2018 48th European Microwave Conference, EuMC 2018

SP - 340

EP - 343

BT - 2018 48th European Microwave Conference, EuMC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 48th European Microwave Conference, EuMC 2018

Y2 - 25 September 2018 through 27 September 2018

ER -

Quasi-MMIC High Power Amplifier with Silicon IPD Matching Network

Abstract

Publication series

Conference

UN SDGs

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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