Raman imaging of stress in a SiGe/Si photoelastic optical channel waveguide structure

H. Rho; Howard E. Jackson; B. L. Weiss

doi:10.1063/1.124670

Raman imaging of stress in a SiGe/Si photoelastic optical channel waveguide structure

H. Rho^*
, Howard E. Jackson
, B. L. Weiss

^*Corresponding author for this work

Department of Physics

University of Cincinnati
University of Surrey

Research output: Contribution to journal › Journal article › peer-review

10 Scopus citations

Abstract

SiGe/Si optical channel waveguide structure stress is investigated using Raman imaging. This stress is produced by the difference in thermal expansion coefficients between a Si₃N₄ stripe and a SiGe layer beneath the stripe. These areas are imaged using Raman polarization selection rules for two transverse optical phonons, relating the Raman peaks to strain components, and then refractively index changes via the photoelastic effect.

Original language	English
Pages (from-to)	1287-1289
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	9
DOIs	https://doi.org/10.1063/1.124670
State	Published - 1999.08.30

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10.1063/1.124670

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@article{523d190b58d84847ba453631e5835533,

title = "Raman imaging of stress in a SiGe/Si photoelastic optical channel waveguide structure",

abstract = "SiGe/Si optical channel waveguide structure stress is investigated using Raman imaging. This stress is produced by the difference in thermal expansion coefficients between a Si3N4 stripe and a SiGe layer beneath the stripe. These areas are imaged using Raman polarization selection rules for two transverse optical phonons, relating the Raman peaks to strain components, and then refractively index changes via the photoelastic effect.",

author = "H. Rho and Jackson, \{Howard E.\} and Weiss, \{B. L.\}",

year = "1999",

month = aug,

day = "30",

doi = "10.1063/1.124670",

language = "English",

volume = "75",

pages = "1287--1289",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Raman imaging of stress in a SiGe/Si photoelastic optical channel waveguide structure

AU - Rho, H.

AU - Jackson, Howard E.

AU - Weiss, B. L.

PY - 1999/8/30

Y1 - 1999/8/30

N2 - SiGe/Si optical channel waveguide structure stress is investigated using Raman imaging. This stress is produced by the difference in thermal expansion coefficients between a Si3N4 stripe and a SiGe layer beneath the stripe. These areas are imaged using Raman polarization selection rules for two transverse optical phonons, relating the Raman peaks to strain components, and then refractively index changes via the photoelastic effect.

AB - SiGe/Si optical channel waveguide structure stress is investigated using Raman imaging. This stress is produced by the difference in thermal expansion coefficients between a Si3N4 stripe and a SiGe layer beneath the stripe. These areas are imaged using Raman polarization selection rules for two transverse optical phonons, relating the Raman peaks to strain components, and then refractively index changes via the photoelastic effect.

UR - https://www.scopus.com/pages/publications/0032607687

U2 - 10.1063/1.124670

DO - 10.1063/1.124670

M3 - Journal article

AN - SCOPUS:0032607687

SN - 0003-6951

VL - 75

SP - 1287

EP - 1289

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Raman imaging of stress in a SiGe/Si photoelastic optical channel waveguide structure

Abstract

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