Raman Spectroscopy and Photocurrent of GaAsN/GaAs Multiple Quantum Wells

Hyeoncheol Kim; Kyu Hwan Shim; Tae Soo Jeong; Sukill Kang; Taek Sung Kim

doi:10.1007/s13391-021-00326-4

Raman Spectroscopy and Photocurrent of GaAsN/GaAs Multiple Quantum Wells

Hyeoncheol Kim
, Kyu Hwan Shim
, Tae Soo Jeong
, Sukill Kang
, Taek Sung Kim^*

^*Corresponding author for this work

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

Abstract

The Raman and photocurrent of the GaAsN/GaAs multiple quantum wells (MQWs) was studied. The Raman spectra are observed to be dominated by the GaAs longitudinal optical (LO) phonon mode as the strongest peaks show up around 287–292 cm^-1. Moreover, the weak and broad spectral features in the range of 265–270 cm^-1 originate from the peaks associated with the GaAs transverse optical (TO) phonon mode. And, the peaks observed in the photoluminescence and the photocurrent spectra were preliminarily assigned to electron–heavy hole (e₁–hh) and electron–light hole (e₁–lh) fundamental transitions. Two additional transitions related to MQWs region are observed other than transitions involving the ground state. The structural properties of GaAsN/GaAs MQWs were investigated by using high-resolution X-ray diffraction (HRXRD). Graphic Abstract: [Figure not available: see fulltext.].

Original language	English
Pages (from-to)	153-158
Number of pages	6
Journal	Electronic Materials Letters
Volume	18
Issue number	2
DOIs	https://doi.org/10.1007/s13391-021-00326-4
State	Published - 2022.03

Keywords

GaAsN/GaAs MQWs
HR-XRD
Photocurrent
Photoluminescence
Raman

Quacquarelli Symonds(QS) Subject Topics

Materials Science

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10.1007/s13391-021-00326-4

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@article{6031b19e98394caa8302bab99159e051,

title = "Raman Spectroscopy and Photocurrent of GaAsN/GaAs Multiple Quantum Wells",

abstract = "The Raman and photocurrent of the GaAsN/GaAs multiple quantum wells (MQWs) was studied. The Raman spectra are observed to be dominated by the GaAs longitudinal optical (LO) phonon mode as the strongest peaks show up around 287–292 cm-1. Moreover, the weak and broad spectral features in the range of 265–270 cm-1 originate from the peaks associated with the GaAs transverse optical (TO) phonon mode. And, the peaks observed in the photoluminescence and the photocurrent spectra were preliminarily assigned to electron–heavy hole (e1–hh) and electron–light hole (e1–lh) fundamental transitions. Two additional transitions related to MQWs region are observed other than transitions involving the ground state. The structural properties of GaAsN/GaAs MQWs were investigated by using high-resolution X-ray diffraction (HRXRD). Graphic Abstract: [Figure not available: see fulltext.].",

keywords = "GaAsN/GaAs MQWs, HR-XRD, Photocurrent, Photoluminescence, Raman",

author = "Hyeoncheol Kim and Shim, \{Kyu Hwan\} and Jeong, \{Tae Soo\} and Sukill Kang and Kim, \{Taek Sung\}",

note = "Publisher Copyright: {\textcopyright} 2022, The Author(s) under exclusive licence to The Korean Institute of Metals and Materials.",

year = "2022",

month = mar,

doi = "10.1007/s13391-021-00326-4",

language = "English",

volume = "18",

pages = "153--158",

journal = "Electronic Materials Letters",

issn = "1738-8090",

number = "2",

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TY - JOUR

T1 - Raman Spectroscopy and Photocurrent of GaAsN/GaAs Multiple Quantum Wells

AU - Kim, Hyeoncheol

AU - Shim, Kyu Hwan

AU - Jeong, Tae Soo

AU - Kang, Sukill

AU - Kim, Taek Sung

PY - 2022/3

Y1 - 2022/3

N2 - The Raman and photocurrent of the GaAsN/GaAs multiple quantum wells (MQWs) was studied. The Raman spectra are observed to be dominated by the GaAs longitudinal optical (LO) phonon mode as the strongest peaks show up around 287–292 cm-1. Moreover, the weak and broad spectral features in the range of 265–270 cm-1 originate from the peaks associated with the GaAs transverse optical (TO) phonon mode. And, the peaks observed in the photoluminescence and the photocurrent spectra were preliminarily assigned to electron–heavy hole (e1–hh) and electron–light hole (e1–lh) fundamental transitions. Two additional transitions related to MQWs region are observed other than transitions involving the ground state. The structural properties of GaAsN/GaAs MQWs were investigated by using high-resolution X-ray diffraction (HRXRD). Graphic Abstract: [Figure not available: see fulltext.].

AB - The Raman and photocurrent of the GaAsN/GaAs multiple quantum wells (MQWs) was studied. The Raman spectra are observed to be dominated by the GaAs longitudinal optical (LO) phonon mode as the strongest peaks show up around 287–292 cm-1. Moreover, the weak and broad spectral features in the range of 265–270 cm-1 originate from the peaks associated with the GaAs transverse optical (TO) phonon mode. And, the peaks observed in the photoluminescence and the photocurrent spectra were preliminarily assigned to electron–heavy hole (e1–hh) and electron–light hole (e1–lh) fundamental transitions. Two additional transitions related to MQWs region are observed other than transitions involving the ground state. The structural properties of GaAsN/GaAs MQWs were investigated by using high-resolution X-ray diffraction (HRXRD). Graphic Abstract: [Figure not available: see fulltext.].

KW - GaAsN/GaAs MQWs

KW - HR-XRD

KW - Photocurrent

KW - Photoluminescence

KW - Raman

UR - https://www.scopus.com/pages/publications/85122286085

U2 - 10.1007/s13391-021-00326-4

DO - 10.1007/s13391-021-00326-4

M3 - Journal article

AN - SCOPUS:85122286085

SN - 1738-8090

VL - 18

SP - 153

EP - 158

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 2

ER -

Raman Spectroscopy and Photocurrent of GaAsN/GaAs Multiple Quantum Wells

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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