Raman studies of InGaAlAs digital alloys

Kyoung In Min; Heesuk Rho; Jing Dong Song; Won Jun Choi; Yong Tak Lee

doi:10.3938/jkps.59.2801

Raman studies of InGaAlAs digital alloys

Kyoung In Min
, Heesuk Rho^*
, Jing Dong Song
, Won Jun Choi
, Yong Tak Lee

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

5 Scopus citations

Abstract

Optical phonons in InGaAlAs digital alloy structures are systematically studied in terms of (In_0.53Ga_0.47As)_l/(In_0.52Al_0.48As)_l (period length l = 1, 2, 4, 5) and (In_0.53Ga_0.47As)_1-z/(In_0.52Al_0.48As)_z (composition z = 0.2, 0.4, 0.6, 0.8) short-period superlattices. Raman spectra reveal GaAs-like and AlAs-like longitudinal optical (LO) phonons confined in In_0.53Ga_0.47As and In_0.52Al_0.48As layers, respectively. InAs-like LO phonons are also observed in the In_0.53Ga_0.47As and the In_0.52Al_0.48As layers. The confined GaAs-like LO phonon frequency is sensitive to the In_0.53Ga_0.47As layer thickness and shifts downward by ~7 cm^-1 with decreasing layer thickness, showing excellent agreement with the LO phonon dispersion for bulk GaAs. Importantly, the confined AlAs-like LO phonon frequency is not sensitive to the In_0.52Al_0.48As layer thickness, indicating the presence of high-quality interface boundaries between the In_0.53Ga_0.47As and the In_0.52Al_0.48As layers.

Original language	English
Pages (from-to)	2801-2805
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	59
Issue number	4
DOIs	https://doi.org/10.3938/jkps.59.2801
State	Published - 2011.10.14

Keywords

Digital alloy
Raman scattering
Superlattice

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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10.3938/jkps.59.2801

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@article{5974c013d64140f38f04ef4db5cb81c0,

title = "Raman studies of InGaAlAs digital alloys",

abstract = "Optical phonons in InGaAlAs digital alloy structures are systematically studied in terms of (In0.53Ga0.47As)l/(In0.52Al0.48As)l (period length l = 1, 2, 4, 5) and (In0.53Ga0.47As)1-z/(In0.52Al0.48As)z (composition z = 0.2, 0.4, 0.6, 0.8) short-period superlattices. Raman spectra reveal GaAs-like and AlAs-like longitudinal optical (LO) phonons confined in In0.53Ga0.47As and In0.52Al0.48As layers, respectively. InAs-like LO phonons are also observed in the In0.53Ga0.47As and the In0.52Al0.48As layers. The confined GaAs-like LO phonon frequency is sensitive to the In0.53Ga0.47As layer thickness and shifts downward by \textasciitilde{}7 cm-1 with decreasing layer thickness, showing excellent agreement with the LO phonon dispersion for bulk GaAs. Importantly, the confined AlAs-like LO phonon frequency is not sensitive to the In0.52Al0.48As layer thickness, indicating the presence of high-quality interface boundaries between the In0.53Ga0.47As and the In0.52Al0.48As layers.",

keywords = "Digital alloy, Raman scattering, Superlattice",

author = "Min, \{Kyoung In\} and Heesuk Rho and Song, \{Jing Dong\} and Choi, \{Won Jun\} and Lee, \{Yong Tak\}",

year = "2011",

month = oct,

day = "14",

doi = "10.3938/jkps.59.2801",

language = "English",

volume = "59",

pages = "2801--2805",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

number = "4",

}

TY - JOUR

T1 - Raman studies of InGaAlAs digital alloys

AU - Min, Kyoung In

AU - Rho, Heesuk

AU - Song, Jing Dong

AU - Choi, Won Jun

AU - Lee, Yong Tak

PY - 2011/10/14

Y1 - 2011/10/14

N2 - Optical phonons in InGaAlAs digital alloy structures are systematically studied in terms of (In0.53Ga0.47As)l/(In0.52Al0.48As)l (period length l = 1, 2, 4, 5) and (In0.53Ga0.47As)1-z/(In0.52Al0.48As)z (composition z = 0.2, 0.4, 0.6, 0.8) short-period superlattices. Raman spectra reveal GaAs-like and AlAs-like longitudinal optical (LO) phonons confined in In0.53Ga0.47As and In0.52Al0.48As layers, respectively. InAs-like LO phonons are also observed in the In0.53Ga0.47As and the In0.52Al0.48As layers. The confined GaAs-like LO phonon frequency is sensitive to the In0.53Ga0.47As layer thickness and shifts downward by ~7 cm-1 with decreasing layer thickness, showing excellent agreement with the LO phonon dispersion for bulk GaAs. Importantly, the confined AlAs-like LO phonon frequency is not sensitive to the In0.52Al0.48As layer thickness, indicating the presence of high-quality interface boundaries between the In0.53Ga0.47As and the In0.52Al0.48As layers.

AB - Optical phonons in InGaAlAs digital alloy structures are systematically studied in terms of (In0.53Ga0.47As)l/(In0.52Al0.48As)l (period length l = 1, 2, 4, 5) and (In0.53Ga0.47As)1-z/(In0.52Al0.48As)z (composition z = 0.2, 0.4, 0.6, 0.8) short-period superlattices. Raman spectra reveal GaAs-like and AlAs-like longitudinal optical (LO) phonons confined in In0.53Ga0.47As and In0.52Al0.48As layers, respectively. InAs-like LO phonons are also observed in the In0.53Ga0.47As and the In0.52Al0.48As layers. The confined GaAs-like LO phonon frequency is sensitive to the In0.53Ga0.47As layer thickness and shifts downward by ~7 cm-1 with decreasing layer thickness, showing excellent agreement with the LO phonon dispersion for bulk GaAs. Importantly, the confined AlAs-like LO phonon frequency is not sensitive to the In0.52Al0.48As layer thickness, indicating the presence of high-quality interface boundaries between the In0.53Ga0.47As and the In0.52Al0.48As layers.

KW - Digital alloy

KW - Raman scattering

KW - Superlattice

UR - https://www.scopus.com/pages/publications/80054955423

U2 - 10.3938/jkps.59.2801

DO - 10.3938/jkps.59.2801

M3 - Journal article

AN - SCOPUS:80054955423

SN - 0374-4884

VL - 59

SP - 2801

EP - 2805

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 4

ER -

Raman studies of InGaAlAs digital alloys

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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