Raman study of InAs/GaAs quantum dot solar cells

Taegeon Lee; Jong Su Kim; Sang Jun Lee; Heesuk Rho

doi:10.1016/j.cap.2019.07.010

Raman study of InAs/GaAs quantum dot solar cells

Taegeon Lee
, Jong Su Kim
, Sang Jun Lee
, Heesuk Rho^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

2 Scopus citations

Abstract

We report polarized and resonant Raman study of InAs/GaAs quantum dot solar cell (QDSC) structures. Raman spectra obtained from the top surfaces of the samples suggested that the formation of InAs QDs induced tensile strain in the overgrown GaAs layers. Furthermore, a longitudinal optical phonon-plasmon (LPP) coupled modes were observed in the p-type GaAs layers. The tensile strain was increased with an increase in the QD size. The hole concentrations estimated by fitting the individual LPP coupled modes were in the range of 2.4–3.5 × 10¹⁸ cm⁻³. Resonant Raman spectra obtained from the cleaved sides, where the QDs were located, showed a 225 cm⁻¹ mode in parallel polarization configurations. Based on accurate analysis, this mode was identified as the LA(X) phonon of GaAs.

Original language	English
Pages (from-to)	1132-1135
Number of pages	4
Journal	Current Applied Physics
Volume	19
Issue number	10
DOIs	https://doi.org/10.1016/j.cap.2019.07.010
State	Published - 2019.10

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

GaAs
InAs
Plasmon
Raman spectroscopy
Solar cell

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

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10.1016/j.cap.2019.07.010

Cite this

@article{94547d1f910d4e3c85a97b4c84489533,

title = "Raman study of InAs/GaAs quantum dot solar cells",

abstract = "We report polarized and resonant Raman study of InAs/GaAs quantum dot solar cell (QDSC) structures. Raman spectra obtained from the top surfaces of the samples suggested that the formation of InAs QDs induced tensile strain in the overgrown GaAs layers. Furthermore, a longitudinal optical phonon-plasmon (LPP) coupled modes were observed in the p-type GaAs layers. The tensile strain was increased with an increase in the QD size. The hole concentrations estimated by fitting the individual LPP coupled modes were in the range of 2.4–3.5 × 1018 cm−3. Resonant Raman spectra obtained from the cleaved sides, where the QDs were located, showed a 225 cm−1 mode in parallel polarization configurations. Based on accurate analysis, this mode was identified as the LA(X) phonon of GaAs.",

keywords = "GaAs, InAs, Plasmon, Raman spectroscopy, Solar cell",

author = "Taegeon Lee and Kim, \{Jong Su\} and Lee, \{Sang Jun\} and Heesuk Rho",

note = "Publisher Copyright: {\textcopyright} 2019 Korean Physical Society",

year = "2019",

month = oct,

doi = "10.1016/j.cap.2019.07.010",

language = "English",

volume = "19",

pages = "1132--1135",

journal = "Current Applied Physics",

issn = "1567-1739",

number = "10",

}

TY - JOUR

T1 - Raman study of InAs/GaAs quantum dot solar cells

AU - Lee, Taegeon

AU - Kim, Jong Su

AU - Lee, Sang Jun

AU - Rho, Heesuk

PY - 2019/10

Y1 - 2019/10

N2 - We report polarized and resonant Raman study of InAs/GaAs quantum dot solar cell (QDSC) structures. Raman spectra obtained from the top surfaces of the samples suggested that the formation of InAs QDs induced tensile strain in the overgrown GaAs layers. Furthermore, a longitudinal optical phonon-plasmon (LPP) coupled modes were observed in the p-type GaAs layers. The tensile strain was increased with an increase in the QD size. The hole concentrations estimated by fitting the individual LPP coupled modes were in the range of 2.4–3.5 × 1018 cm−3. Resonant Raman spectra obtained from the cleaved sides, where the QDs were located, showed a 225 cm−1 mode in parallel polarization configurations. Based on accurate analysis, this mode was identified as the LA(X) phonon of GaAs.

AB - We report polarized and resonant Raman study of InAs/GaAs quantum dot solar cell (QDSC) structures. Raman spectra obtained from the top surfaces of the samples suggested that the formation of InAs QDs induced tensile strain in the overgrown GaAs layers. Furthermore, a longitudinal optical phonon-plasmon (LPP) coupled modes were observed in the p-type GaAs layers. The tensile strain was increased with an increase in the QD size. The hole concentrations estimated by fitting the individual LPP coupled modes were in the range of 2.4–3.5 × 1018 cm−3. Resonant Raman spectra obtained from the cleaved sides, where the QDs were located, showed a 225 cm−1 mode in parallel polarization configurations. Based on accurate analysis, this mode was identified as the LA(X) phonon of GaAs.

KW - GaAs

KW - InAs

KW - Plasmon

KW - Raman spectroscopy

KW - Solar cell

UR - https://www.scopus.com/pages/publications/85069640997

U2 - 10.1016/j.cap.2019.07.010

DO - 10.1016/j.cap.2019.07.010

M3 - Journal article

AN - SCOPUS:85069640997

SN - 1567-1739

VL - 19

SP - 1132

EP - 1135

JO - Current Applied Physics

JF - Current Applied Physics

IS - 10

ER -

Raman study of InAs/GaAs quantum dot solar cells

Abstract

UN SDGs

Keywords

Quacquarelli Symonds(QS) Subject Topics

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