Realization of high-power dimmable GaN-based LEDs by hybrid integration with AlGaN/GaN HFETs

We successfully demonstrated high-power dimmable GaN-based vertical injection LEDs (VI-LEDs) by integration with AlGaN/GaN-based heterojunction field-effect transistors (HFETs) using a flip-chip bonding technique. The high-power dimmable GaN-based VI-LEDs on AlGaN/GaN HFETs emitted no light in the off-state of the HFETs and operated normally in the on-state of the HFETs. Furthermore, the light-output power (LOP), forward current, and maximum electroluminescence (EL) intensity were efficiently modulated with the gate-to-source voltage (V _GS) of the HFETs. The temperature rose by less than 20 °C when the devices were operated with a V _GS of -3 V and supply voltage (V _DD) of 10 °V. These results suggest that the high-power dimmable GaN-based VI-LEDs can be fabricated through hybrid integration with AlGaN/GaN HFETs, and the devices could be applied to novel applications such as visible light communication (VLC) and adaptive headlights for vehicles.