Recent advances in 1D metal oxide semiconductor nanofibers for field-effect transistors and emerging applications

One-dimensional (1D) semiconductor metal oxide nanofibers (NFs) have emerged as promising materials for high-performance field-effect transistors (FETs) due to their superior surface-to-volume ratio, short charge-transport pathway for high carrier mobility, excelent optical transparency, and mechanical flexibility. This review provides a comprehensive overview of representative metal oxide nanofibers and synthesis methods, device configurations, electrical properties, performance metrics, emerging applications, challenges, and future prospects of these nanostructures in FETs. Key materials such as doped In₂O₃, ZnO, SnO₂, In-Zn-O, Sn-Zn-O, and In-Ga-Zn-O (IGZO), In-Sn-Zn-O (ITZO) are discussed, highlighting advancements in fabrication techniques like electrospinning, hydrothermal, and blow spinning processes. Performance improvements, including field-effect mobility exceeding 10 cm² V⁻¹ s⁻¹ and on/off current ratios above 10⁶, underscore their potential in transparent and flexible electronics. Finally, a comprehensive review of MO NF-based FETs for emerging applications, including gas sensors, biosensors, wearable electronics, neuromorphic electronics and memory devices, phototransistors, and optoelectronic devices, is presented. The discussion highlights the versatility and multifunctionality of semiconductor MO NF FETs, demonstrating their significant potential for diverse electronic, sensing, and energy-related applications. Despite challenges like high contact resistance and scalability, ongoing innovations position these materials critical for next generation nanoelectronics.