Recent development of patterned structure light-emitting diodes

Jaehee Cho; Jeong Wook Lee; Jin Seo Im; Cheolsoo Sone; Yongjo Park; Dongho Kim; Heonsu Jeon; Euijoon Yoon; Dong Seok Leem; Tae Yeon Seong

doi:10.1117/12.625922

Recent development of patterned structure light-emitting diodes

Jaehee Cho^*
, Jeong Wook Lee
, Jin Seo Im
, Cheolsoo Sone
, Yongjo Park
, Dongho Kim
, Heonsu Jeon
, Euijoon Yoon
, Dong Seok Leem
, Tae Yeon Seong

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Samsung
Seoul National University
Gwangju Institute of Science and Technology

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

The efficiency of a conventional light emitting diode (LED) is limited by coupling of light into guided modes in the structure. Several methods to increase the extraction efficiency of nitride-based LEDs are studied from the perspective of the patterned structures in LEDs. The patterned structures are made in the interface between a semiconductor and a sapphire substrate and on the surface of a semiconductor or an indium tin oxide electrode. All of these approaches show an increased light output compared to that of reference samples, which means these kinds of scattering sources are inevitable to make a highly efficient light emitter in nitride-based semiconductor system.

Original language	English
Article number	594102
Pages (from-to)	1-8
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5941
DOIs	https://doi.org/10.1117/12.625922
State	Published - 2005
Event	Fifth International Conference on Solid State Lighting - San Diego, CA, United States Duration: 2005.08.1 → 2005.08.4

Keywords

Extraction efficiency
GaN
Light emitting diode
Patterning

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10.1117/12.625922

Cite this

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title = "Recent development of patterned structure light-emitting diodes",

abstract = "The efficiency of a conventional light emitting diode (LED) is limited by coupling of light into guided modes in the structure. Several methods to increase the extraction efficiency of nitride-based LEDs are studied from the perspective of the patterned structures in LEDs. The patterned structures are made in the interface between a semiconductor and a sapphire substrate and on the surface of a semiconductor or an indium tin oxide electrode. All of these approaches show an increased light output compared to that of reference samples, which means these kinds of scattering sources are inevitable to make a highly efficient light emitter in nitride-based semiconductor system.",

keywords = "Extraction efficiency, GaN, Light emitting diode, Patterning",

author = "Jaehee Cho and Lee, \{Jeong Wook\} and Im, \{Jin Seo\} and Cheolsoo Sone and Yongjo Park and Dongho Kim and Heonsu Jeon and Euijoon Yoon and Leem, \{Dong Seok\} and Seong, \{Tae Yeon\}",

year = "2005",

doi = "10.1117/12.625922",

language = "English",

volume = "5941",

pages = "1--8",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

note = "Fifth International Conference on Solid State Lighting ; Conference date: 01-08-2005 Through 04-08-2005",

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TY - JOUR

T1 - Recent development of patterned structure light-emitting diodes

AU - Cho, Jaehee

AU - Lee, Jeong Wook

AU - Im, Jin Seo

AU - Sone, Cheolsoo

AU - Park, Yongjo

AU - Kim, Dongho

AU - Jeon, Heonsu

AU - Yoon, Euijoon

AU - Leem, Dong Seok

AU - Seong, Tae Yeon

PY - 2005

Y1 - 2005

N2 - The efficiency of a conventional light emitting diode (LED) is limited by coupling of light into guided modes in the structure. Several methods to increase the extraction efficiency of nitride-based LEDs are studied from the perspective of the patterned structures in LEDs. The patterned structures are made in the interface between a semiconductor and a sapphire substrate and on the surface of a semiconductor or an indium tin oxide electrode. All of these approaches show an increased light output compared to that of reference samples, which means these kinds of scattering sources are inevitable to make a highly efficient light emitter in nitride-based semiconductor system.

AB - The efficiency of a conventional light emitting diode (LED) is limited by coupling of light into guided modes in the structure. Several methods to increase the extraction efficiency of nitride-based LEDs are studied from the perspective of the patterned structures in LEDs. The patterned structures are made in the interface between a semiconductor and a sapphire substrate and on the surface of a semiconductor or an indium tin oxide electrode. All of these approaches show an increased light output compared to that of reference samples, which means these kinds of scattering sources are inevitable to make a highly efficient light emitter in nitride-based semiconductor system.

KW - Extraction efficiency

KW - GaN

KW - Light emitting diode

KW - Patterning

UR - https://www.scopus.com/pages/publications/31844442554

U2 - 10.1117/12.625922

DO - 10.1117/12.625922

M3 - Conference article

AN - SCOPUS:31844442554

SN - 0277-786X

VL - 5941

SP - 1

EP - 8

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 594102

T2 - Fifth International Conference on Solid State Lighting

Y2 - 1 August 2005 through 4 August 2005

ER -

Recent development of patterned structure light-emitting diodes

Abstract

Keywords

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