Recovery process for trimethyl-indium (TMIn) precursor used in compound semiconductors such as InGaN

Jaeyeol Yang; Jaewon Lim; Jaesik Yoon

doi:10.1007/s10854-019-02307-8

Recovery process for trimethyl-indium (TMIn) precursor used in compound semiconductors such as InGaN

Jaeyeol Yang
, Jaewon Lim
, Jaesik Yoon^*

^*Corresponding author for this work

Metallurgical System Engineering

Korea Basic Science Institute

Research output: Contribution to journal › Journal article › peer-review

Abstract

TMIn is used as a metal organic precursor for MOCVD to grow InGaN or InN, which form the basis of solar cells or green LEDs. However, TMIn has a residual amount of about 10% in a used TMIn canister. This study aims to recover the residual amount of TMIn and to re-use it as a precursor after purification. Analysis of the inorganic impurities after refining TMIn shows that the total impurity is lower than 530 μg/L by ICP-AES. In the FT-NMR of detective organic chemical bonding of “(CH₃)₃In” peak is observed with no defective organic structure of bonding. In addition, InGaN MQW was deposited using refined TMIn and characterization was carried out. The structural and optical properties of the MQW analyzed by XRD and TEM were very similar to the reference MQW.

Original language	English
Pages (from-to)	19444-19449
Number of pages	6
Journal	Journal of Materials Science: Materials in Electronics
Volume	30
Issue number	21
DOIs	https://doi.org/10.1007/s10854-019-02307-8
State	Published - 2019.11.1

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Physics & Astronomy

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Cite this

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title = "Recovery process for trimethyl-indium (TMIn) precursor used in compound semiconductors such as InGaN",

abstract = "TMIn is used as a metal organic precursor for MOCVD to grow InGaN or InN, which form the basis of solar cells or green LEDs. However, TMIn has a residual amount of about 10\% in a used TMIn canister. This study aims to recover the residual amount of TMIn and to re-use it as a precursor after purification. Analysis of the inorganic impurities after refining TMIn shows that the total impurity is lower than 530 μg/L by ICP-AES. In the FT-NMR of detective organic chemical bonding of “(CH3)3In” peak is observed with no defective organic structure of bonding. In addition, InGaN MQW was deposited using refined TMIn and characterization was carried out. The structural and optical properties of the MQW analyzed by XRD and TEM were very similar to the reference MQW.",

author = "Jaeyeol Yang and Jaewon Lim and Jaesik Yoon",

note = "Publisher Copyright: {\textcopyright} 2019, Springer Science+Business Media, LLC, part of Springer Nature.",

year = "2019",

month = nov,

day = "1",

doi = "10.1007/s10854-019-02307-8",

language = "English",

volume = "30",

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journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

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TY - JOUR

T1 - Recovery process for trimethyl-indium (TMIn) precursor used in compound semiconductors such as InGaN

AU - Yang, Jaeyeol

AU - Lim, Jaewon

AU - Yoon, Jaesik

PY - 2019/11/1

Y1 - 2019/11/1

N2 - TMIn is used as a metal organic precursor for MOCVD to grow InGaN or InN, which form the basis of solar cells or green LEDs. However, TMIn has a residual amount of about 10% in a used TMIn canister. This study aims to recover the residual amount of TMIn and to re-use it as a precursor after purification. Analysis of the inorganic impurities after refining TMIn shows that the total impurity is lower than 530 μg/L by ICP-AES. In the FT-NMR of detective organic chemical bonding of “(CH3)3In” peak is observed with no defective organic structure of bonding. In addition, InGaN MQW was deposited using refined TMIn and characterization was carried out. The structural and optical properties of the MQW analyzed by XRD and TEM were very similar to the reference MQW.

AB - TMIn is used as a metal organic precursor for MOCVD to grow InGaN or InN, which form the basis of solar cells or green LEDs. However, TMIn has a residual amount of about 10% in a used TMIn canister. This study aims to recover the residual amount of TMIn and to re-use it as a precursor after purification. Analysis of the inorganic impurities after refining TMIn shows that the total impurity is lower than 530 μg/L by ICP-AES. In the FT-NMR of detective organic chemical bonding of “(CH3)3In” peak is observed with no defective organic structure of bonding. In addition, InGaN MQW was deposited using refined TMIn and characterization was carried out. The structural and optical properties of the MQW analyzed by XRD and TEM were very similar to the reference MQW.

UR - https://www.scopus.com/pages/publications/85074158857

U2 - 10.1007/s10854-019-02307-8

DO - 10.1007/s10854-019-02307-8

M3 - Journal article

AN - SCOPUS:85074158857

SN - 0957-4522

VL - 30

SP - 19444

EP - 19449

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 21

ER -

Recovery process for trimethyl-indium (TMIn) precursor used in compound semiconductors such as InGaN

Abstract

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