Rectifying diode made of individual gallium nitride nanowire

Jae Ryoung Kim; Hwangyou Oh; Hye Mi So; Jinhee Kim; Ju Jin Kim

doi:10.1016/S1386-9477(02)00979-7

Rectifying diode made of individual gallium nitride nanowire

Jae Ryoung Kim
, Hwangyou Oh
, Hye Mi So
, Jinhee Kim
, Ju Jin Kim^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

We have fabricated a Schottky-junction diode, utilizing gallium nitride (GaN) nanowire, and studied its electrical transport properties. Two kinds of metal electrodes, Al and Ti/Au, were incorporated into an individual GaN nanowire synthesized by chemical vapor deposition method. A Schottky-barrier junction was formed in the Al electrode while ohmic contact was formed in the Ti/Au electrode. The measured current-voltage characteristic exhibited clear rectifying behavior and no reverse bias breakdown was observed up to the measured voltage, -5 V.

Original language	English
Pages (from-to)	225-226
Number of pages	2
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	18
Issue number	1-3
DOIs	https://doi.org/10.1016/S1386-9477(02)00979-7
State	Published - 2003.05
Event	23rd International Conference on Low Temperature Physics - Hiroshima, Japan Duration: 2002.08.20 → 2002.08.27

Keywords

GaN
Nanowire
Schottky diode

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

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10.1016/S1386-9477(02)00979-7

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title = "Rectifying diode made of individual gallium nitride nanowire",

abstract = "We have fabricated a Schottky-junction diode, utilizing gallium nitride (GaN) nanowire, and studied its electrical transport properties. Two kinds of metal electrodes, Al and Ti/Au, were incorporated into an individual GaN nanowire synthesized by chemical vapor deposition method. A Schottky-barrier junction was formed in the Al electrode while ohmic contact was formed in the Ti/Au electrode. The measured current-voltage characteristic exhibited clear rectifying behavior and no reverse bias breakdown was observed up to the measured voltage, -5 V.",

keywords = "GaN, Nanowire, Schottky diode",

author = "Kim, \{Jae Ryoung\} and Hwangyou Oh and So, \{Hye Mi\} and Jinhee Kim and Kim, \{Ju Jin\}",

year = "2003",

month = may,

doi = "10.1016/S1386-9477(02)00979-7",

language = "English",

volume = "18",

pages = "225--226",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

number = "1-3",

note = "23rd International Conference on Low Temperature Physics ; Conference date: 20-08-2002 Through 27-08-2002",

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TY - JOUR

T1 - Rectifying diode made of individual gallium nitride nanowire

AU - Kim, Jae Ryoung

AU - Oh, Hwangyou

AU - So, Hye Mi

AU - Kim, Jinhee

AU - Kim, Ju Jin

PY - 2003/5

Y1 - 2003/5

N2 - We have fabricated a Schottky-junction diode, utilizing gallium nitride (GaN) nanowire, and studied its electrical transport properties. Two kinds of metal electrodes, Al and Ti/Au, were incorporated into an individual GaN nanowire synthesized by chemical vapor deposition method. A Schottky-barrier junction was formed in the Al electrode while ohmic contact was formed in the Ti/Au electrode. The measured current-voltage characteristic exhibited clear rectifying behavior and no reverse bias breakdown was observed up to the measured voltage, -5 V.

AB - We have fabricated a Schottky-junction diode, utilizing gallium nitride (GaN) nanowire, and studied its electrical transport properties. Two kinds of metal electrodes, Al and Ti/Au, were incorporated into an individual GaN nanowire synthesized by chemical vapor deposition method. A Schottky-barrier junction was formed in the Al electrode while ohmic contact was formed in the Ti/Au electrode. The measured current-voltage characteristic exhibited clear rectifying behavior and no reverse bias breakdown was observed up to the measured voltage, -5 V.

KW - GaN

KW - Nanowire

KW - Schottky diode

UR - https://www.scopus.com/pages/publications/0038518461

U2 - 10.1016/S1386-9477(02)00979-7

DO - 10.1016/S1386-9477(02)00979-7

M3 - Conference article

AN - SCOPUS:0038518461

SN - 1386-9477

VL - 18

SP - 225

EP - 226

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-3

T2 - 23rd International Conference on Low Temperature Physics

Y2 - 20 August 2002 through 27 August 2002

ER -

Rectifying diode made of individual gallium nitride nanowire

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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