| Original language | Korean |
|---|---|
| Journal | Electronics Letters |
| State | Published - 2008.08.29 |
Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver
Reduced gate leakage current in an AlGaN/GaN HEMT by oxygen passivation of AlGaN surface
Research output: Contribution to journal › Journal article › peer-review