Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors

S. Kim; J. H. Ryou; R. D. Dupuis; H. Kim

doi:10.1049/el.2015.3430

Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors

S. Kim
, J. H. Ryou
, R. D. Dupuis
, H. Kim^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University
University of Houston
Georgia Institute of Technology

Research output: Contribution to journal › Journal article › peer-review

Abstract

AlInN/GaN high electron mobility transistors fabricated with the semiinsulating barrier layer was investigated to reduce the gate leakage current. The gate leakage current was obtained to be as low as 4.1 × 10^-4 mA/mm at the gate bias of -10 V owing to the use of higher and thicker potential barrier of Mg-doped AlInN.

Original language	English
Pages (from-to)	157-159
Number of pages	3
Journal	Electronics Letters
Volume	52
Issue number	2
DOIs	https://doi.org/10.1049/el.2015.3430
State	Published - 2016.01.21

Quacquarelli Symonds(QS) Subject Topics

Engineering - Electrical & Electronic
Engineering - Petroleum

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10.1049/el.2015.3430

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@article{28f1593ebee1416c902682dc9b048d2f,

title = "Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors",

abstract = "AlInN/GaN high electron mobility transistors fabricated with the semiinsulating barrier layer was investigated to reduce the gate leakage current. The gate leakage current was obtained to be as low as 4.1 × 10-4 mA/mm at the gate bias of -10 V owing to the use of higher and thicker potential barrier of Mg-doped AlInN.",

author = "S. Kim and Ryou, \{J. H.\} and Dupuis, \{R. D.\} and H. Kim",

note = "Publisher Copyright: {\textcopyright} The Institution of Engineering and Technology 2016.",

year = "2016",

month = jan,

day = "21",

doi = "10.1049/el.2015.3430",

language = "English",

volume = "52",

pages = "157--159",

journal = "Electronics Letters",

issn = "0013-5194",

number = "2",

}

TY - JOUR

T1 - Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors

AU - Kim, S.

AU - Ryou, J. H.

AU - Dupuis, R. D.

AU - Kim, H.

PY - 2016/1/21

Y1 - 2016/1/21

N2 - AlInN/GaN high electron mobility transistors fabricated with the semiinsulating barrier layer was investigated to reduce the gate leakage current. The gate leakage current was obtained to be as low as 4.1 × 10-4 mA/mm at the gate bias of -10 V owing to the use of higher and thicker potential barrier of Mg-doped AlInN.

AB - AlInN/GaN high electron mobility transistors fabricated with the semiinsulating barrier layer was investigated to reduce the gate leakage current. The gate leakage current was obtained to be as low as 4.1 × 10-4 mA/mm at the gate bias of -10 V owing to the use of higher and thicker potential barrier of Mg-doped AlInN.

UR - https://www.scopus.com/pages/publications/84955290872

U2 - 10.1049/el.2015.3430

DO - 10.1049/el.2015.3430

M3 - Journal article

AN - SCOPUS:84955290872

SN - 0013-5194

VL - 52

SP - 157

EP - 159

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors

Abstract

Quacquarelli Symonds(QS) Subject Topics

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