Abstract
The assembly of reduced graphene oxide (rGO) and fullerene (C60) into hybrid (rGO/C60) wires was successfully performed by employing the liquid-liquid interfacial precipitation method. The rGO sheets spontaneously wrapped C60 wires through the π-π interaction between rGO and C60. Structural characterization of the rGO/C60 wires was carried out by using UV/visible spectroscopy, scanning electron microscopy, and transmission electron microscopy. FET devices with rGO/C60 wires were fabricated to investigate their electrical properties. The I ds-Vg curves of the hybrid wires exhibited p-type semiconducting behavior both in vacuum and in air, indicating hole transport through rGO as a shell layer, whereas pure C60 wires and rGO sheets showed n-type and ambipolar behaviors, respectively, under vacuum. Possible application of the fabricated wires, such as photovoltaic devices, was also demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 8365-8371 |
| Number of pages | 7 |
| Journal | ACS Nano |
| Volume | 5 |
| Issue number | 10 |
| DOIs | |
| State | Published - 2011.10.25 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- charge transfer
- field effect transistor
- fullerene wires
- photovoltaic device
- reduced graphene oxide
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Physics & Astronomy
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