Reentrance of conductance in mesoscopic normal-metal/superconductor junctions

  • Nam Kim
  • , H. Lee*
  • , H. S. Chang
  • , J. J. Kim
  • , J. O. Lee
  • , J. W. Park
  • , K. H. Yoo
  • *Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

Abstract

Two different kinds of mesoscopic N-S-N junctions were fabricated by sandwiching Al or Pb film between two closely separated Au wires. dV/dI versus V curves for an Au-Pb-Au junction show a sharp zero-bias dip, while those for an Au-Al-Au show a reentrant zero-bias maximum. Interference between conjugate electrons and holes at an interface with different degree of transparency is responsible for the contrasting behavior.

Original languageEnglish
Pages (from-to)1866-1867
Number of pages2
JournalPhysica B: Physics of Condensed Matter
Volume284-288
Issue numberPART II
DOIs
StatePublished - 2000

Keywords

  • Andreev reflection
  • Proximity effect
  • Reentrance of conductance

Quacquarelli Symonds(QS) Subject Topics

  • Materials Science
  • Engineering - Electrical & Electronic
  • Engineering - Petroleum
  • Physics & Astronomy

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