Reflectance Minimization of GaAs Solar Cell with Single- and Double-Layer Anti-Reflection Coatings: A Simulation Study

Renewable energy is in high demand, with significant contributions from the solar industry encouraging research into more efficient, cost-effective, and versatile solar cell technologies. Anti-reflection coating (ARC) is an important method for improving solar cell efficiency by minimizing light reflectance and maximizing photon absorption. This study investigates the electrical and optical behaviors of single- and double-layer ARCs for gallium arsenide (GaAs) solar cells, using PC1D simulation for single-layer SiO₂, and ZnSe, and double-layer SiO₂/ZnSe configurations. The findings indicate that the double-layer SiO₂/ZnSe ARC structure significantly reduces reflectance and enhances light absorption, leading to a higher current density (J_sc) and overall efficiency. With optimized layer thicknesses of 60 nm (ZnSe) and 100 nm (SiO₂), the efficiency increased from 20.628% to 30.904%, representing a 49.81% improvement. This enhancement is primarily attributed to the increased photon absorption and a higher electron–hole generation rate, confirming the superior performance of double-layer ARCs over single-layer configurations.