Regrowth of diluted magnetic semiconductor GaMnAs on InGaP (001) surfaces to realize freestanding micromechanical structures

Hyung Kook Choi; Joon Sue Lee; Sung Woon Cho; Won Oh Lee; Seung Bo Shim; Yun Daniel Park

doi:10.1063/1.2712179

Regrowth of diluted magnetic semiconductor GaMnAs on InGaP (001) surfaces to realize freestanding micromechanical structures

Hyung Kook Choi^*
, Joon Sue Lee
, Sung Woon Cho
, Won Oh Lee
, Seung Bo Shim
, Yun Daniel Park

^*Corresponding author for this work

Department of Physics

Seoul National University

Research output: Contribution to journal › Journal article › peer-review

5 Scopus citations

Abstract

Low temperature molecular beam epitaxy regrowths of Ga_1-xMn _xAs (x ≈ 0.04) diluted magnetic semiconductors on GaAs/In _1-yGa_yP/GaAs(001) and In_1-yGa _yP/GaAs(001) (y ≈ 0.51) heterostructures prepared by metal-organic chemical vapor deposition are described. The resulting Ga_1-xMn _xAs properties are comparable to epitaxial films grown directly on GaAs (001) substrates from in situ reflection high-energy electron diffraction, x-ray diffraction, magnetometry, and transport measurements with magnetic ordering temperature of as-grown films to range between ∼50 and ∼60 K. Postgrowth low temperature annealing enhances both magnetic and transport properties. Perfect etch selectivity between Ga_1-xMn _xAs/GaAs and In_1-xGa_yP is utilized to realize suspended Ga_1-xMn_xAs/GaAs doubly clamped beam micromechanical freestanding structures.

Original language	English
Article number	063906
Journal	Journal of Applied Physics
Volume	101
Issue number	6
DOIs	https://doi.org/10.1063/1.2712179
State	Published - 2007

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@article{1a9beeeba1d34bca809d885d5a3f3cc0,

title = "Regrowth of diluted magnetic semiconductor GaMnAs on InGaP (001) surfaces to realize freestanding micromechanical structures",

abstract = "Low temperature molecular beam epitaxy regrowths of Ga1-xMn xAs (x ≈ 0.04) diluted magnetic semiconductors on GaAs/In 1-yGayP/GaAs(001) and In1-yGa yP/GaAs(001) (y ≈ 0.51) heterostructures prepared by metal-organic chemical vapor deposition are described. The resulting Ga1-xMn xAs properties are comparable to epitaxial films grown directly on GaAs (001) substrates from in situ reflection high-energy electron diffraction, x-ray diffraction, magnetometry, and transport measurements with magnetic ordering temperature of as-grown films to range between ∼50 and ∼60 K. Postgrowth low temperature annealing enhances both magnetic and transport properties. Perfect etch selectivity between Ga1-xMn xAs/GaAs and In1-xGayP is utilized to realize suspended Ga1-xMnxAs/GaAs doubly clamped beam micromechanical freestanding structures.",

author = "Choi, \{Hyung Kook\} and Lee, \{Joon Sue\} and Cho, \{Sung Woon\} and Lee, \{Won Oh\} and Shim, \{Seung Bo\} and Park, \{Yun Daniel\}",

year = "2007",

doi = "10.1063/1.2712179",

language = "English",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "6",

}

TY - JOUR

T1 - Regrowth of diluted magnetic semiconductor GaMnAs on InGaP (001) surfaces to realize freestanding micromechanical structures

AU - Choi, Hyung Kook

AU - Lee, Joon Sue

AU - Cho, Sung Woon

AU - Lee, Won Oh

AU - Shim, Seung Bo

AU - Park, Yun Daniel

PY - 2007

Y1 - 2007

N2 - Low temperature molecular beam epitaxy regrowths of Ga1-xMn xAs (x ≈ 0.04) diluted magnetic semiconductors on GaAs/In 1-yGayP/GaAs(001) and In1-yGa yP/GaAs(001) (y ≈ 0.51) heterostructures prepared by metal-organic chemical vapor deposition are described. The resulting Ga1-xMn xAs properties are comparable to epitaxial films grown directly on GaAs (001) substrates from in situ reflection high-energy electron diffraction, x-ray diffraction, magnetometry, and transport measurements with magnetic ordering temperature of as-grown films to range between ∼50 and ∼60 K. Postgrowth low temperature annealing enhances both magnetic and transport properties. Perfect etch selectivity between Ga1-xMn xAs/GaAs and In1-xGayP is utilized to realize suspended Ga1-xMnxAs/GaAs doubly clamped beam micromechanical freestanding structures.

AB - Low temperature molecular beam epitaxy regrowths of Ga1-xMn xAs (x ≈ 0.04) diluted magnetic semiconductors on GaAs/In 1-yGayP/GaAs(001) and In1-yGa yP/GaAs(001) (y ≈ 0.51) heterostructures prepared by metal-organic chemical vapor deposition are described. The resulting Ga1-xMn xAs properties are comparable to epitaxial films grown directly on GaAs (001) substrates from in situ reflection high-energy electron diffraction, x-ray diffraction, magnetometry, and transport measurements with magnetic ordering temperature of as-grown films to range between ∼50 and ∼60 K. Postgrowth low temperature annealing enhances both magnetic and transport properties. Perfect etch selectivity between Ga1-xMn xAs/GaAs and In1-xGayP is utilized to realize suspended Ga1-xMnxAs/GaAs doubly clamped beam micromechanical freestanding structures.

UR - https://www.scopus.com/pages/publications/34047148322

U2 - 10.1063/1.2712179

DO - 10.1063/1.2712179

M3 - Journal article

AN - SCOPUS:34047148322

SN - 0021-8979

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 063906

ER -

Regrowth of diluted magnetic semiconductor GaMnAs on InGaP (001) surfaces to realize freestanding micromechanical structures

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