Skip to main navigation Skip to search Skip to main content

Reply to Comments by Ortiz-Conde et al.

  • Gun Hee Kim
  • , Hagyoul Bae
  • , Jae Hur
  • , Choong Ki Kim
  • , Geon Bum Lee
  • , Tewook Bang
  • , Yang Kyu Choi*
  • *Corresponding author for this work
  • Korea Advanced Institute of Science and Technology
  • SK Corporation

Research output: Contribution to journalJournal articlepeer-review

Abstract

In this response, we show that the paper by Kim et al. by our group has a different research purpose and uses different modeling processes, which was not described in the previous work by Ortiz-Conde et al. The comments issued by Ortiz-Conde et al., who claim that our paper corresponds to a particular case of their previous work, are in our opinion overgeneralized. Differences compared to Ortiz-Conde's previous work are discussed in detail. We also explain how the problem on threshold voltage pointed out by Ortiz-Conde et al. can be solved through a semiempirical method from measured data.

Original languageEnglish
Article number8429516
Pages (from-to)4022-4024
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume65
Issue number9
DOIs
StatePublished - 2018.09

Keywords

  • Drain resistance
  • extrinsic resistance
  • high-k metal gate (HKMG) MOSFET
  • intrinsic resistance
  • parasitic resistance
  • separate extraction, series resistance
  • source resistance

Fingerprint

Dive into the research topics of 'Reply to Comments by Ortiz-Conde et al.'. Together they form a unique fingerprint.

Cite this