Abstract
In this response, we show that the paper by Kim et al. by our group has a different research purpose and uses different modeling processes, which was not described in the previous work by Ortiz-Conde et al. The comments issued by Ortiz-Conde et al., who claim that our paper corresponds to a particular case of their previous work, are in our opinion overgeneralized. Differences compared to Ortiz-Conde's previous work are discussed in detail. We also explain how the problem on threshold voltage pointed out by Ortiz-Conde et al. can be solved through a semiempirical method from measured data.
| Original language | English |
|---|---|
| Article number | 8429516 |
| Pages (from-to) | 4022-4024 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 65 |
| Issue number | 9 |
| DOIs | |
| State | Published - 2018.09 |
Keywords
- Drain resistance
- extrinsic resistance
- high-k metal gate (HKMG) MOSFET
- intrinsic resistance
- parasitic resistance
- separate extraction, series resistance
- source resistance
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