Resistive switching characteristics of solution-processible TiOx using nano-scale via-hole structures

Seungjae Jung; Tae Wook Kim; Hyejung Choi; Jaemin Kong; Ju Bong Park; Minseok Jo; Seonghyun Kim; Wootae Lee; Joonmyoung Lee; Takhee Lee; Kwanghee Lee; Hyunsang Hwang

doi:10.1109/ISDRS.2009.5378068

Resistive switching characteristics of solution-processible TiO_x using nano-scale via-hole structures

Seungjae Jung^*
, Tae Wook Kim
, Hyejung Choi
, Jaemin Kong
, Ju Bong Park
, Minseok Jo
, Seonghyun Kim
, Wootae Lee
, Joonmyoung Lee
, Takhee Lee
, Kwanghee Lee
, Hyunsang Hwang

^*Corresponding author for this work

Department of Flexible and Printable Electronics

Gwangju Institute of Science and Technology

Research output: Contribution to conference › Conference paper › peer-review

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378068
State	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: 2009.12.9 → 2009.12.11

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Conference

Conference	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	09.12.9 → 09.12.11

Access to Document

10.1109/ISDRS.2009.5378068

Cite this

Jung, S., Kim, T. W., Choi, H., Kong, J., Park, J. B., Jo, M., Kim, S., Lee, W., Lee, J., Lee, T., Lee, K., & Hwang, H. (2009). Resistive switching characteristics of solution-processible TiO_x using nano-scale via-hole structures. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 Article 5378068 (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378068

@inproceedings{d5358a63d5634990a08b69e7599965ad,

title = "Resistive switching characteristics of solution-processible TiOx using nano-scale via-hole structures",

author = "Seungjae Jung and Kim, \{Tae Wook\} and Hyejung Choi and Jaemin Kong and Park, \{Ju Bong\} and Minseok Jo and Seonghyun Kim and Wootae Lee and Joonmyoung Lee and Takhee Lee and Kwanghee Lee and Hyunsang Hwang",

year = "2009",

doi = "10.1109/ISDRS.2009.5378068",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Jung, S, Kim, TW, Choi, H, Kong, J, Park, JB, Jo, M, Kim, S, Lee, W, Lee, J, Lee, T, Lee, K & Hwang, H 2009, Resistive switching characteristics of solution-processible TiO_x using nano-scale via-hole structures. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378068, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 09.12.9. https://doi.org/10.1109/ISDRS.2009.5378068

Resistive switching characteristics of solution-processible TiO_x using nano-scale via-hole structures. / Jung, Seungjae; Kim, Tae Wook; Choi, Hyejung et al.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378068 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Resistive switching characteristics of solution-processible TiOx using nano-scale via-hole structures

AU - Jung, Seungjae

AU - Kim, Tae Wook

AU - Choi, Hyejung

AU - Kong, Jaemin

AU - Park, Ju Bong

AU - Jo, Minseok

AU - Kim, Seonghyun

AU - Lee, Wootae

AU - Lee, Joonmyoung

AU - Lee, Takhee

AU - Lee, Kwanghee

AU - Hwang, Hyunsang

PY - 2009

Y1 - 2009

UR - https://www.scopus.com/pages/publications/77949345504

U2 - 10.1109/ISDRS.2009.5378068

DO - 10.1109/ISDRS.2009.5378068

M3 - Conference paper

AN - SCOPUS:77949345504

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009