Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

Seunghyup Lee; Heejin Kim; Dong Jin Yun; Shi Woo Rhee; Kijung Yong

doi:10.1063/1.3280864

Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

Seunghyup Lee
, Heejin Kim
, Dong Jin Yun
, Shi Woo Rhee
, Kijung Yong^*

^*Corresponding author for this work

Division of Chemical Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

170 Scopus citations

Abstract

This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film on the SS substrate. The fabricated device showed stable unipolar and bipolar resistive switching behaviors with reliable switching responses over 100 cycles. The device performance was not degraded upon bending, which indicates high potential for flexible ReRAM applications.

Original language	English
Article number	262113
Journal	Applied Physics Letters
Volume	95
Issue number	26
DOIs	https://doi.org/10.1063/1.3280864
State	Published - 2009

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title = "Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices",

abstract = "This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film on the SS substrate. The fabricated device showed stable unipolar and bipolar resistive switching behaviors with reliable switching responses over 100 cycles. The device performance was not degraded upon bending, which indicates high potential for flexible ReRAM applications.",

author = "Seunghyup Lee and Heejin Kim and Yun, \{Dong Jin\} and Rhee, \{Shi Woo\} and Kijung Yong",

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volume = "95",

journal = "Applied Physics Letters",

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T1 - Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

AU - Lee, Seunghyup

AU - Kim, Heejin

AU - Yun, Dong Jin

AU - Rhee, Shi Woo

AU - Yong, Kijung

PY - 2009

Y1 - 2009

N2 - This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film on the SS substrate. The fabricated device showed stable unipolar and bipolar resistive switching behaviors with reliable switching responses over 100 cycles. The device performance was not degraded upon bending, which indicates high potential for flexible ReRAM applications.

AB - This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film on the SS substrate. The fabricated device showed stable unipolar and bipolar resistive switching behaviors with reliable switching responses over 100 cycles. The device performance was not degraded upon bending, which indicates high potential for flexible ReRAM applications.

UR - https://www.scopus.com/pages/publications/73649141715

U2 - 10.1063/1.3280864

DO - 10.1063/1.3280864

M3 - Journal article

AN - SCOPUS:73649141715

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262113

ER -

Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

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