Reverse leakage current mechanism in crystalline silicon solar cells with N+/P junctions

Myeong Il Jeong; Vallivedu Janardhanam; Kyung Won Moon; Jin Sung Kim; Kyu Sang Shin; Chel Jong Choi

doi:10.1109/PVSC.2011.6186548

Reverse leakage current mechanism in crystalline silicon solar cells with N+/P junctions

Myeong Il Jeong^*
, Vallivedu Janardhanam
, Kyung Won Moon
, Jin Sung Kim
, Kyu Sang Shin
, Chel Jong Choi

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to conference › Conference paper › peer-review

1 Scopus citations

Abstract

We have investigated the reverse leakage current mechanism of screen-printed Ag contacts on P-diffused crystalline Si solar cells of different efficiencies. The current-voltage measurements have been carried out in the temperature range of 175 - 450 K in steps of 25 K. The leakage current is independent of temperature for T< 300 K indicating the tunneling mechanism to be dominant at these temperatures in the cells of both efficiencies. The cell with higher efficiency exhibited higher leakage current compared to the lower efficiency cell as also evidenced by the lower activation energy obtained from the Arrhenius plot of reverse current. The higher leakage current in higher efficiency cell could be due to increased Schottky junction formation area compared to the lower efficiency cell.

Original language	English
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	2881-2884
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2011.6186548
State	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 2011.06.19 → 2011.06.24

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	11.06.19 → 11.06.24

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Quacquarelli Symonds(QS) Subject Topics

Engineering - Mechanical
Computer Science & Information Systems
Engineering - Electrical & Electronic
Engineering - Petroleum

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10.1109/PVSC.2011.6186548

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Jeong, M. I., Janardhanam, V., Moon, K. W., Kim, J. S., Shin, K. S., & Choi, C. J. (2011). Reverse leakage current mechanism in crystalline silicon solar cells with N+/P junctions. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 2881-2884). Article 6186548 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6186548

@inproceedings{86063f6664204d9da7a680168189f026,

title = "Reverse leakage current mechanism in crystalline silicon solar cells with N+/P junctions",

abstract = "We have investigated the reverse leakage current mechanism of screen-printed Ag contacts on P-diffused crystalline Si solar cells of different efficiencies. The current-voltage measurements have been carried out in the temperature range of 175 - 450 K in steps of 25 K. The leakage current is independent of temperature for T< 300 K indicating the tunneling mechanism to be dominant at these temperatures in the cells of both efficiencies. The cell with higher efficiency exhibited higher leakage current compared to the lower efficiency cell as also evidenced by the lower activation energy obtained from the Arrhenius plot of reverse current. The higher leakage current in higher efficiency cell could be due to increased Schottky junction formation area compared to the lower efficiency cell.",

author = "Jeong, \{Myeong Il\} and Vallivedu Janardhanam and Moon, \{Kyung Won\} and Kim, \{Jin Sung\} and Shin, \{Kyu Sang\} and Choi, \{Chel Jong\}",

year = "2011",

doi = "10.1109/PVSC.2011.6186548",

language = "English",

isbn = "9781424499656",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "2881--2884",

booktitle = "Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011",

note = "37th IEEE Photovoltaic Specialists Conference, PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

}

Jeong, MI, Janardhanam, V, Moon, KW, Kim, JS, Shin, KS & Choi, CJ 2011, Reverse leakage current mechanism in crystalline silicon solar cells with N+/P junctions. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6186548, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2881-2884, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 11.06.19. https://doi.org/10.1109/PVSC.2011.6186548

Reverse leakage current mechanism in crystalline silicon solar cells with N+/P junctions. / Jeong, Myeong Il; Janardhanam, Vallivedu; Moon, Kyung Won et al.
Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 2881-2884 6186548 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Reverse leakage current mechanism in crystalline silicon solar cells with N+/P junctions

AU - Jeong, Myeong Il

AU - Janardhanam, Vallivedu

AU - Moon, Kyung Won

AU - Kim, Jin Sung

AU - Shin, Kyu Sang

AU - Choi, Chel Jong

PY - 2011

Y1 - 2011

N2 - We have investigated the reverse leakage current mechanism of screen-printed Ag contacts on P-diffused crystalline Si solar cells of different efficiencies. The current-voltage measurements have been carried out in the temperature range of 175 - 450 K in steps of 25 K. The leakage current is independent of temperature for T< 300 K indicating the tunneling mechanism to be dominant at these temperatures in the cells of both efficiencies. The cell with higher efficiency exhibited higher leakage current compared to the lower efficiency cell as also evidenced by the lower activation energy obtained from the Arrhenius plot of reverse current. The higher leakage current in higher efficiency cell could be due to increased Schottky junction formation area compared to the lower efficiency cell.

AB - We have investigated the reverse leakage current mechanism of screen-printed Ag contacts on P-diffused crystalline Si solar cells of different efficiencies. The current-voltage measurements have been carried out in the temperature range of 175 - 450 K in steps of 25 K. The leakage current is independent of temperature for T< 300 K indicating the tunneling mechanism to be dominant at these temperatures in the cells of both efficiencies. The cell with higher efficiency exhibited higher leakage current compared to the lower efficiency cell as also evidenced by the lower activation energy obtained from the Arrhenius plot of reverse current. The higher leakage current in higher efficiency cell could be due to increased Schottky junction formation area compared to the lower efficiency cell.

UR - https://www.scopus.com/pages/publications/84861066779

U2 - 10.1109/PVSC.2011.6186548

DO - 10.1109/PVSC.2011.6186548

M3 - Conference paper

AN - SCOPUS:84861066779

SN - 9781424499656

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2881

EP - 2884

BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

Y2 - 19 June 2011 through 24 June 2011

ER -

Reverse leakage current mechanism in crystalline silicon solar cells with N+/P junctions

Abstract

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