Rewritable switching of one diode-one resistor nonvolatile organic memory devices

Byungjin Cho; Tae Wook Kim; Sunghoon Song; Yongsung Ji; Minseok Jo; Hyunsang Hwang; Gun Young Jung; Takhee Lee

doi:10.1002/adma.200903203

Rewritable switching of one diode-one resistor nonvolatile organic memory devices

Byungjin Cho^*
, Tae Wook Kim
, Sunghoon Song
, Yongsung Ji
, Minseok Jo
, Hyunsang Hwang
, Gun Young Jung
, Takhee Lee

^*Corresponding author for this work

Department of Flexible and Printable Electronics

Gwangju Institute of Science and Technology
University of Washington

Research output: Contribution to journal › Journal article › peer-review

183 Scopus citations

Abstract

One diode-one resistor (1D-1R) hybridtype devices consisting of an inorganic Schottky diode and an organic unipolar memory show electrically rewritable switching characteristics as well as rectifying properties. The 1D-1R array architecture improves the sensing efficiency of the array memory cell, ultimately creating the possibility for high-density integrated organic memory devices without restrictions due to cross-talk between cells. Figure Presented.

Original language	English
Pages (from-to)	1228-1232
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	11
DOIs	https://doi.org/10.1002/adma.200903203
State	Published - 2010.03.19

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10.1002/adma.200903203

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@article{3ab94ef811c84443ab5a71976e67a4b0,

title = "Rewritable switching of one diode-one resistor nonvolatile organic memory devices",

abstract = "One diode-one resistor (1D-1R) hybridtype devices consisting of an inorganic Schottky diode and an organic unipolar memory show electrically rewritable switching characteristics as well as rectifying properties. The 1D-1R array architecture improves the sensing efficiency of the array memory cell, ultimately creating the possibility for high-density integrated organic memory devices without restrictions due to cross-talk between cells. Figure Presented.",

author = "Byungjin Cho and Kim, \{Tae Wook\} and Sunghoon Song and Yongsung Ji and Minseok Jo and Hyunsang Hwang and Jung, \{Gun Young\} and Takhee Lee",

year = "2010",

month = mar,

day = "19",

doi = "10.1002/adma.200903203",

language = "English",

volume = "22",

pages = "1228--1232",

journal = "Advanced Materials",

issn = "0935-9648",

number = "11",

}

TY - JOUR

T1 - Rewritable switching of one diode-one resistor nonvolatile organic memory devices

AU - Cho, Byungjin

AU - Kim, Tae Wook

AU - Song, Sunghoon

AU - Ji, Yongsung

AU - Jo, Minseok

AU - Hwang, Hyunsang

AU - Jung, Gun Young

AU - Lee, Takhee

PY - 2010/3/19

Y1 - 2010/3/19

N2 - One diode-one resistor (1D-1R) hybridtype devices consisting of an inorganic Schottky diode and an organic unipolar memory show electrically rewritable switching characteristics as well as rectifying properties. The 1D-1R array architecture improves the sensing efficiency of the array memory cell, ultimately creating the possibility for high-density integrated organic memory devices without restrictions due to cross-talk between cells. Figure Presented.

AB - One diode-one resistor (1D-1R) hybridtype devices consisting of an inorganic Schottky diode and an organic unipolar memory show electrically rewritable switching characteristics as well as rectifying properties. The 1D-1R array architecture improves the sensing efficiency of the array memory cell, ultimately creating the possibility for high-density integrated organic memory devices without restrictions due to cross-talk between cells. Figure Presented.

UR - https://www.scopus.com/pages/publications/77950277801

U2 - 10.1002/adma.200903203

DO - 10.1002/adma.200903203

M3 - Journal article

C2 - 20437509

AN - SCOPUS:77950277801

SN - 0935-9648

VL - 22

SP - 1228

EP - 1232

JO - Advanced Materials

JF - Advanced Materials

IS - 11

ER -

Rewritable switching of one diode-one resistor nonvolatile organic memory devices

Abstract

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