Role of a Mo interlayer on the thermal stability of nickel silicides

Y. W. Ok; C. J. Choi; T. Y. Seong; C. Thanachayanont

doi:10.1201/9781351074636

Role of a Mo interlayer on the thermal stability of nickel silicides

Y. W. Ok
, C. J. Choi
, T. Y. Seong
, C. Thanachayanont

Department of Semiconductor Science and Technology

Gwangju Institute of Science and Technology
National Science and Technology Development Agency Thailand

Research output: Contribution to conference › Chapter › peer-review

Abstract

We investigate the effect of a Mo interlayer on the thermal stability of nickel silicides. Glancing angle x-ray diffraction results show that NiSi is transformed into NiSi₂ at temperatures in excess of 700°c, at which the tetragonal MOSi₂ phase is also formed. It is shown that the Mo layer moves toward the surface region, when annealed at temperatures in excess of 500°c. It is also shown that the use of the interlayer is effective in improving the surface morphology of the silicide films and the uniformity of the silicide/Si interface.

Original language	English
Title of host publication	Microscopy of Semiconducting Materials 2003
Publisher	CRC Press
Pages	475-478
Number of pages	4
ISBN (Electronic)	9781351083089
ISBN (Print)	0750309792, 9781315895536
DOIs	https://doi.org/10.1201/9781351074636
State	Published - 2018.01.1

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abstract = "We investigate the effect of a Mo interlayer on the thermal stability of nickel silicides. Glancing angle x-ray diffraction results show that NiSi is transformed into NiSi2 at temperatures in excess of 700°c, at which the tetragonal MOSi2 phase is also formed. It is shown that the Mo layer moves toward the surface region, when annealed at temperatures in excess of 500°c. It is also shown that the use of the interlayer is effective in improving the surface morphology of the silicide films and the uniformity of the silicide/Si interface.",

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AB - We investigate the effect of a Mo interlayer on the thermal stability of nickel silicides. Glancing angle x-ray diffraction results show that NiSi is transformed into NiSi2 at temperatures in excess of 700°c, at which the tetragonal MOSi2 phase is also formed. It is shown that the Mo layer moves toward the surface region, when annealed at temperatures in excess of 500°c. It is also shown that the use of the interlayer is effective in improving the surface morphology of the silicide films and the uniformity of the silicide/Si interface.

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BT - Microscopy of Semiconducting Materials 2003

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ER -

Role of a Mo interlayer on the thermal stability of nickel silicides

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