S6-G4: High injection and efficiency droop in GaInN light-emitting diodes

  • Guan Bo Lin
  • , David S. Meyaard
  • , E. Fred Schubert
  • , Jaehee Cho
  • , Jong Kyu Kim
  • , Hyunwook Shim
  • , Min Ho Kim
  • , Cheolsoo Sone

Research output: Contribution to conferenceConference paperpeer-review

Abstract

An evident correlation between the high injection and the efficiency droop is demonstrated in GaInN light-emitting diodes (LEDs) for temperature ranging from 80K to 450K. For this temperature range, the efficiency droop has the same thermal tendency with the high injection, i.e. the onset shifts to lower voltage and higher current with increasing temperature. The voltage difference between two onsets mainly falls on the resistive p-type region and induces strong electric field to enable electron drift leakage and the resulting efficiency droop.

Original languageEnglish
Title of host publicationLester Eastman Conference 2014 - High Performance Devices, LEC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479964413
DOIs
StatePublished - 2014.11.10
Event2014 Lester Eastman Conference on High Performance Devices, LEC 2014 - Ithaca, United States
Duration: 2014.08.52014.08.7

Publication series

NameLester Eastman Conference 2014 - High Performance Devices, LEC 2014

Conference

Conference2014 Lester Eastman Conference on High Performance Devices, LEC 2014
Country/TerritoryUnited States
CityIthaca
Period14.08.514.08.7

Keywords

  • efficiency droop
  • electron leakage
  • GaInN
  • high injection
  • light-emitting diode

Quacquarelli Symonds(QS) Subject Topics

  • Materials Science
  • Engineering - Electrical & Electronic
  • Engineering - Petroleum
  • Physics & Astronomy

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