Schottky barrier heights of n/p-type erbium-silicided schottky diodes

Myungsim Jun; Yarkyeon Kim; Cheljong Choi; Taeyoub Kim; Soonyoung Oh; Moongyu Jang

doi:10.1016/j.mee.2007.12.019

Schottky barrier heights of n/p-type erbium-silicided schottky diodes

Myungsim Jun^*
, Yarkyeon Kim
, Cheljong Choi
, Taeyoub Kim
, Soonyoung Oh
, Moongyu Jang

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

5 Scopus citations

Abstract

The Schottky barrier heights for electrons and holes of erbium-silicided Schottky diodes were extracted from the current-voltage-temperature characteristics in reverse bias condition. The effective barrier heights increased with temperature. The highest effective barrier heights for electrons and holes were extracted to be 0.38 eV and 0.67 eV at the high temperatures, respectively. The effective barrier heights may be close to the temperature-independent barrier heights of erbium-silicided Schottky diodes since the sum of the two barrier heights for electrons and holes is close to the bandgap of silicon and the conduction mechanisms of carriers can be explained by the pure thermionic emission model at the high temperatures.

Original language	English
Pages (from-to)	1395-1398
Number of pages	4
Journal	Microelectronic Engineering
Volume	85
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mee.2007.12.019
State	Published - 2008.05

Keywords

Erbium silicide
Schottky barrier height
Schottky diode

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10.1016/j.mee.2007.12.019

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title = "Schottky barrier heights of n/p-type erbium-silicided schottky diodes",

abstract = "The Schottky barrier heights for electrons and holes of erbium-silicided Schottky diodes were extracted from the current-voltage-temperature characteristics in reverse bias condition. The effective barrier heights increased with temperature. The highest effective barrier heights for electrons and holes were extracted to be 0.38 eV and 0.67 eV at the high temperatures, respectively. The effective barrier heights may be close to the temperature-independent barrier heights of erbium-silicided Schottky diodes since the sum of the two barrier heights for electrons and holes is close to the bandgap of silicon and the conduction mechanisms of carriers can be explained by the pure thermionic emission model at the high temperatures.",

keywords = "Erbium silicide, Schottky barrier height, Schottky diode",

author = "Myungsim Jun and Yarkyeon Kim and Cheljong Choi and Taeyoub Kim and Soonyoung Oh and Moongyu Jang",

year = "2008",

month = may,

doi = "10.1016/j.mee.2007.12.019",

language = "English",

volume = "85",

pages = "1395--1398",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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T1 - Schottky barrier heights of n/p-type erbium-silicided schottky diodes

AU - Jun, Myungsim

AU - Kim, Yarkyeon

AU - Choi, Cheljong

AU - Kim, Taeyoub

AU - Oh, Soonyoung

AU - Jang, Moongyu

PY - 2008/5

Y1 - 2008/5

N2 - The Schottky barrier heights for electrons and holes of erbium-silicided Schottky diodes were extracted from the current-voltage-temperature characteristics in reverse bias condition. The effective barrier heights increased with temperature. The highest effective barrier heights for electrons and holes were extracted to be 0.38 eV and 0.67 eV at the high temperatures, respectively. The effective barrier heights may be close to the temperature-independent barrier heights of erbium-silicided Schottky diodes since the sum of the two barrier heights for electrons and holes is close to the bandgap of silicon and the conduction mechanisms of carriers can be explained by the pure thermionic emission model at the high temperatures.

AB - The Schottky barrier heights for electrons and holes of erbium-silicided Schottky diodes were extracted from the current-voltage-temperature characteristics in reverse bias condition. The effective barrier heights increased with temperature. The highest effective barrier heights for electrons and holes were extracted to be 0.38 eV and 0.67 eV at the high temperatures, respectively. The effective barrier heights may be close to the temperature-independent barrier heights of erbium-silicided Schottky diodes since the sum of the two barrier heights for electrons and holes is close to the bandgap of silicon and the conduction mechanisms of carriers can be explained by the pure thermionic emission model at the high temperatures.

KW - Erbium silicide

KW - Schottky barrier height

KW - Schottky diode

UR - https://www.scopus.com/pages/publications/44349168955

U2 - 10.1016/j.mee.2007.12.019

DO - 10.1016/j.mee.2007.12.019

M3 - Journal article

AN - SCOPUS:44349168955

SN - 0167-9317

VL - 85

SP - 1395

EP - 1398

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 5-6

ER -

Schottky barrier heights of n/p-type erbium-silicided schottky diodes

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Keywords

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