Schottky barrier N-type thin film transistors with polycrystalline silicon channel and Er-silicided metallic junctions

Jin Wook Shin; Chel Jong Choi; Moongyu Jang; Won Ju Cho

doi:10.1109/LED.2008.2007511

Schottky barrier N-type thin film transistors with polycrystalline silicon channel and Er-silicided metallic junctions

Jin Wook Shin^*
, Chel Jong Choi
, Moongyu Jang
, Won Ju Cho

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Kwangwoon University
Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

N-type Schottky barrier thin film transistors (SB-TFTs) with polycrystalline silicon channel and metallic junctions were fabricated by using Er silicidation, and electrical structural properties were compared to conventional TFTs with phosphorous-doped source/drain regions. The performances of SB-TFTs are better than that of the conventional TFTs. A forming gas annealing process leads to a great improvement in the characteristics of both devices. In particular, excellent electrical characteristics were obtained from the forming gas annealed SB-TFTs: the subthreshold swing of 180 mV/dec, the drive current of 1.47 × 10^-5 A, and the on/off current ratio of 5 × 10⁶.

Original language	English
Pages (from-to)	1336-1339
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	29
Issue number	12
DOIs	https://doi.org/10.1109/LED.2008.2007511
State	Published - 2008

Keywords

Er silicide
Forming gas annealing (FGA)
Metallic junction
Poly-Si Schottky barrier TFT (SB-TFT)

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum

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@article{46db901a4d57435fa3b9b39e9982369b,

title = "Schottky barrier N-type thin film transistors with polycrystalline silicon channel and Er-silicided metallic junctions",

abstract = "N-type Schottky barrier thin film transistors (SB-TFTs) with polycrystalline silicon channel and metallic junctions were fabricated by using Er silicidation, and electrical structural properties were compared to conventional TFTs with phosphorous-doped source/drain regions. The performances of SB-TFTs are better than that of the conventional TFTs. A forming gas annealing process leads to a great improvement in the characteristics of both devices. In particular, excellent electrical characteristics were obtained from the forming gas annealed SB-TFTs: the subthreshold swing of 180 mV/dec, the drive current of 1.47 × 10-5 A, and the on/off current ratio of 5 × 106.",

keywords = "Er silicide, Forming gas annealing (FGA), Metallic junction, Poly-Si Schottky barrier TFT (SB-TFT)",

author = "Shin, \{Jin Wook\} and Choi, \{Chel Jong\} and Moongyu Jang and Cho, \{Won Ju\}",

year = "2008",

doi = "10.1109/LED.2008.2007511",

language = "English",

volume = "29",

pages = "1336--1339",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "12",

}

TY - JOUR

T1 - Schottky barrier N-type thin film transistors with polycrystalline silicon channel and Er-silicided metallic junctions

AU - Shin, Jin Wook

AU - Choi, Chel Jong

AU - Jang, Moongyu

AU - Cho, Won Ju

PY - 2008

Y1 - 2008

N2 - N-type Schottky barrier thin film transistors (SB-TFTs) with polycrystalline silicon channel and metallic junctions were fabricated by using Er silicidation, and electrical structural properties were compared to conventional TFTs with phosphorous-doped source/drain regions. The performances of SB-TFTs are better than that of the conventional TFTs. A forming gas annealing process leads to a great improvement in the characteristics of both devices. In particular, excellent electrical characteristics were obtained from the forming gas annealed SB-TFTs: the subthreshold swing of 180 mV/dec, the drive current of 1.47 × 10-5 A, and the on/off current ratio of 5 × 106.

AB - N-type Schottky barrier thin film transistors (SB-TFTs) with polycrystalline silicon channel and metallic junctions were fabricated by using Er silicidation, and electrical structural properties were compared to conventional TFTs with phosphorous-doped source/drain regions. The performances of SB-TFTs are better than that of the conventional TFTs. A forming gas annealing process leads to a great improvement in the characteristics of both devices. In particular, excellent electrical characteristics were obtained from the forming gas annealed SB-TFTs: the subthreshold swing of 180 mV/dec, the drive current of 1.47 × 10-5 A, and the on/off current ratio of 5 × 106.

KW - Er silicide

KW - Forming gas annealing (FGA)

KW - Metallic junction

KW - Poly-Si Schottky barrier TFT (SB-TFT)

UR - https://www.scopus.com/pages/publications/57049146283

U2 - 10.1109/LED.2008.2007511

DO - 10.1109/LED.2008.2007511

M3 - Journal article

AN - SCOPUS:57049146283

SN - 0741-3106

VL - 29

SP - 1336

EP - 1339

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

Schottky barrier N-type thin film transistors with polycrystalline silicon channel and Er-silicided metallic junctions

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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