Skip to main navigation Skip to search Skip to main content

Schottky Characteristics of Pt Contacts on (11-22) Semipolar n-Type GaN Grown on m-Plane Sapphire Substrates

Research output: Contribution to journalJournal articlepeer-review

Original languageKorean
JournalElectronic Materials Letters
StatePublished - 2012.02.1

Cite this