Schottky characteristics of Pt contacts on (11-22) semipolar n-type GaN grown on m-plane sapphire substrates

Sungmin Jung; Sung Nam Lee; Kwang Soon Ahn; Hyunsoo Kim

doi:10.1007/s13391-011-1097-4

Schottky characteristics of Pt contacts on (11-22) semipolar n-type GaN grown on m-plane sapphire substrates

Sungmin Jung
, Sung Nam Lee
, Kwang Soon Ahn
, Hyunsoo Kim^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University
Tech University of Korea
Yeungnam University

Research output: Contribution to journal › Journal article › peer-review

8 Scopus citations

Abstract

The Schottky characteristics of Pt contacts fabricated on (11-22) semipolar n-type GaN were investigated. The saturation current density and the ideality factors obtained using the thermionic emission model were as large as 2.2 × 10 ^-3 A/cm ² and 2.19, respectively, as a result of the strong leakage components in the currentvoltage curves. The barrier inhomogeneity model applied to the temperature dependent electrical data exhibited a mean barrier height of 1.1 eV with a large standard deviation of 169 meV. The thermionic field emission model yielded reliable Schottky parameters including a tunneling parameter of 0.054 eV and a Schottky barrier height of 1.23 eV.

Original language	English
Pages (from-to)	17-20
Number of pages	4
Journal	Electronic Materials Letters
Volume	8
Issue number	1
DOIs	https://doi.org/10.1007/s13391-011-1097-4
State	Published - 2012.02

Keywords

contact
diode
Schottky barrier height
semipolar n-GaN

Quacquarelli Symonds(QS) Subject Topics

Materials Science

Access to Document

10.1007/s13391-011-1097-4

Cite this

@article{73deeff819a44dc0a60ba8afcc008487,

title = "Schottky characteristics of Pt contacts on (11-22) semipolar n-type GaN grown on m-plane sapphire substrates",

abstract = "The Schottky characteristics of Pt contacts fabricated on (11-22) semipolar n-type GaN were investigated. The saturation current density and the ideality factors obtained using the thermionic emission model were as large as 2.2 × 10 -3 A/cm 2 and 2.19, respectively, as a result of the strong leakage components in the currentvoltage curves. The barrier inhomogeneity model applied to the temperature dependent electrical data exhibited a mean barrier height of 1.1 eV with a large standard deviation of 169 meV. The thermionic field emission model yielded reliable Schottky parameters including a tunneling parameter of 0.054 eV and a Schottky barrier height of 1.23 eV.",

keywords = "contact, diode, Schottky barrier height, semipolar n-GaN",

author = "Sungmin Jung and Lee, \{Sung Nam\} and Ahn, \{Kwang Soon\} and Hyunsoo Kim",

year = "2012",

month = feb,

doi = "10.1007/s13391-011-1097-4",

language = "English",

volume = "8",

pages = "17--20",

journal = "Electronic Materials Letters",

issn = "1738-8090",

number = "1",

}

TY - JOUR

T1 - Schottky characteristics of Pt contacts on (11-22) semipolar n-type GaN grown on m-plane sapphire substrates

AU - Jung, Sungmin

AU - Lee, Sung Nam

AU - Ahn, Kwang Soon

AU - Kim, Hyunsoo

PY - 2012/2

Y1 - 2012/2

N2 - The Schottky characteristics of Pt contacts fabricated on (11-22) semipolar n-type GaN were investigated. The saturation current density and the ideality factors obtained using the thermionic emission model were as large as 2.2 × 10 -3 A/cm 2 and 2.19, respectively, as a result of the strong leakage components in the currentvoltage curves. The barrier inhomogeneity model applied to the temperature dependent electrical data exhibited a mean barrier height of 1.1 eV with a large standard deviation of 169 meV. The thermionic field emission model yielded reliable Schottky parameters including a tunneling parameter of 0.054 eV and a Schottky barrier height of 1.23 eV.

AB - The Schottky characteristics of Pt contacts fabricated on (11-22) semipolar n-type GaN were investigated. The saturation current density and the ideality factors obtained using the thermionic emission model were as large as 2.2 × 10 -3 A/cm 2 and 2.19, respectively, as a result of the strong leakage components in the currentvoltage curves. The barrier inhomogeneity model applied to the temperature dependent electrical data exhibited a mean barrier height of 1.1 eV with a large standard deviation of 169 meV. The thermionic field emission model yielded reliable Schottky parameters including a tunneling parameter of 0.054 eV and a Schottky barrier height of 1.23 eV.

KW - contact

KW - diode

KW - Schottky barrier height

KW - semipolar n-GaN

UR - https://www.scopus.com/pages/publications/84863279512

U2 - 10.1007/s13391-011-1097-4

DO - 10.1007/s13391-011-1097-4

M3 - Journal article

AN - SCOPUS:84863279512

SN - 1738-8090

VL - 8

SP - 17

EP - 20

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 1

ER -

Schottky characteristics of Pt contacts on (11-22) semipolar n-type GaN grown on m-plane sapphire substrates

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this