Schottky diodes based on a single GaN nanowire

Jae Ryoung Kim; Hwangyou Oh; Hye Mi So; Ju Jin Kim; Jinhee Kim; Cheol Jin Lee; Seung Chul Lyu

doi:10.1088/0957-4484/13/5/333

Schottky diodes based on a single GaN nanowire

Jae Ryoung Kim
, Hwangyou Oh
, Hye Mi So
, Ju Jin Kim^*
, Jinhee Kim
, Cheol Jin Lee
, Seung Chul Lyu

^*Corresponding author for this work

Department of Physics

Jeonbuk National University
Korea Research Institute of Standards and Science
Hanyang University

Research output: Contribution to journal › Journal article › peer-review

91 Scopus citations

Abstract

On a single GaN nanowire, obtained by chemical vapour deposition, several Schottky-junction diodes were fabricated and their electrical transport properties were studied. Alternately attached metal electrodes of Al and Ti/Au formed a Schottky barrier junction (for Al) or an ohmic contact (for Ti/Au), resulting in several diodes on a single nanowire. The current-voltage measurements exhibited clear rectifying behaviour and no reverse-bias breakdown was observed up to the measured voltage, -5 V. The forward-bias threshold voltage was observed to decrease linearly with temperature, from 0.4 V at 280 K to 1 V at 10 K.

Original language	English
Pages (from-to)	701-704
Number of pages	4
Journal	Nanotechnology
Volume	13
Issue number	5
DOIs	https://doi.org/10.1088/0957-4484/13/5/333
State	Published - 2002.10

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Mechanical
Engineering - Electrical & Electronic
Engineering - Petroleum
Engineering - Chemical
Chemistry

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Cite this

@article{bba65ed1d7c94c3f81e61924c723785e,

title = "Schottky diodes based on a single GaN nanowire",

abstract = "On a single GaN nanowire, obtained by chemical vapour deposition, several Schottky-junction diodes were fabricated and their electrical transport properties were studied. Alternately attached metal electrodes of Al and Ti/Au formed a Schottky barrier junction (for Al) or an ohmic contact (for Ti/Au), resulting in several diodes on a single nanowire. The current-voltage measurements exhibited clear rectifying behaviour and no reverse-bias breakdown was observed up to the measured voltage, -5 V. The forward-bias threshold voltage was observed to decrease linearly with temperature, from 0.4 V at 280 K to 1 V at 10 K.",

author = "Kim, \{Jae Ryoung\} and Hwangyou Oh and So, \{Hye Mi\} and Kim, \{Ju Jin\} and Jinhee Kim and Lee, \{Cheol Jin\} and Lyu, \{Seung Chul\}",

year = "2002",

month = oct,

doi = "10.1088/0957-4484/13/5/333",

language = "English",

volume = "13",

pages = "701--704",

journal = "Nanotechnology",

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TY - JOUR

T1 - Schottky diodes based on a single GaN nanowire

AU - Kim, Jae Ryoung

AU - Oh, Hwangyou

AU - So, Hye Mi

AU - Kim, Ju Jin

AU - Kim, Jinhee

AU - Lee, Cheol Jin

AU - Lyu, Seung Chul

PY - 2002/10

Y1 - 2002/10

N2 - On a single GaN nanowire, obtained by chemical vapour deposition, several Schottky-junction diodes were fabricated and their electrical transport properties were studied. Alternately attached metal electrodes of Al and Ti/Au formed a Schottky barrier junction (for Al) or an ohmic contact (for Ti/Au), resulting in several diodes on a single nanowire. The current-voltage measurements exhibited clear rectifying behaviour and no reverse-bias breakdown was observed up to the measured voltage, -5 V. The forward-bias threshold voltage was observed to decrease linearly with temperature, from 0.4 V at 280 K to 1 V at 10 K.

AB - On a single GaN nanowire, obtained by chemical vapour deposition, several Schottky-junction diodes were fabricated and their electrical transport properties were studied. Alternately attached metal electrodes of Al and Ti/Au formed a Schottky barrier junction (for Al) or an ohmic contact (for Ti/Au), resulting in several diodes on a single nanowire. The current-voltage measurements exhibited clear rectifying behaviour and no reverse-bias breakdown was observed up to the measured voltage, -5 V. The forward-bias threshold voltage was observed to decrease linearly with temperature, from 0.4 V at 280 K to 1 V at 10 K.

UR - https://www.scopus.com/pages/publications/0036801206

U2 - 10.1088/0957-4484/13/5/333

DO - 10.1088/0957-4484/13/5/333

M3 - Journal article

AN - SCOPUS:0036801206

SN - 0957-4484

VL - 13

SP - 701

EP - 704

JO - Nanotechnology

JF - Nanotechnology

IS - 5

ER -

Schottky diodes based on a single GaN nanowire

Abstract

Quacquarelli Symonds(QS) Subject Topics

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