Abstract
We have studied the process of sealing an exposed A1As to prevent further wet oxidation. A critical step in this sealing process consists of the first wet oxidation for a short time at 408 °C in a steam environment of a previously room-ambient exposed A1As surface. During this brief wet oxidation, a dense oxide surface barrier with a thickness of 1.1 μm is formed, which further blocks diffusing oxygen species during the second wet oxidation. The effectiveness of the sealing is demonstrated through its use as a mask against wet oxidation in the fabrication of oxide-confined vertical-cavity surface-emitting lasers.
| Original language | English |
|---|---|
| Pages (from-to) | 1915-1917 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 71 |
| Issue number | 14 |
| DOIs | |
| State | Published - 1997.10.6 |
Quacquarelli Symonds(QS) Subject Topics
- Physics & Astronomy
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