Selective chemical wet etching of Si0.8Ge0.2/Si multilayer

Yeon Ho Kil; Jong Han Yang; Sukil Kang; Tae Soo Jeong; Taek Sung Kim; Kyu Hwan Shim

doi:10.5573/JSTS.2013.13.6.668

Selective chemical wet etching of Si_0.8Ge_0.2/Si multilayer

Yeon Ho Kil
, Jong Han Yang
, Sukil Kang
, Tae Soo Jeong
, Taek Sung Kim
, Kyu Hwan Shim

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

14 Scopus citations

Abstract

We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6%), 2 vp H₂O₂ (30%) and 3 vp CH₃COOH (99.8%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of Si_0.8Ge_0.2 layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.

Original language	English
Pages (from-to)	668-675
Number of pages	8
Journal	Journal of Semiconductor Technology and Science
Volume	13
Issue number	6
DOIs	https://doi.org/10.5573/JSTS.2013.13.6.668
State	Published - 2013.12

Keywords

Multi-layer
Selective etching
Si
SiGe
SON

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum

Access to Document

10.5573/JSTS.2013.13.6.668

Cite this

@article{3c9b7b769edf4d318cff387c849a891b,

title = "Selective chemical wet etching of Si0.8Ge0.2/Si multilayer",

abstract = "We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6\%), 2 vp H2O2 (30\%) and 3 vp CH3COOH (99.8\%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of Si0.8Ge0.2 layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.",

keywords = "Multi-layer, Selective etching, Si, SiGe, SON",

author = "Kil, \{Yeon Ho\} and Yang, \{Jong Han\} and Sukil Kang and Jeong, \{Tae Soo\} and Kim, \{Taek Sung\} and Shim, \{Kyu Hwan\}",

year = "2013",

month = dec,

doi = "10.5573/JSTS.2013.13.6.668",

language = "English",

volume = "13",

pages = "668--675",

journal = "Journal of Semiconductor Technology and Science",

issn = "1598-1657",

number = "6",

}

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T1 - Selective chemical wet etching of Si0.8Ge0.2/Si multilayer

AU - Kil, Yeon Ho

AU - Yang, Jong Han

AU - Kang, Sukil

AU - Jeong, Tae Soo

AU - Kim, Taek Sung

AU - Shim, Kyu Hwan

PY - 2013/12

Y1 - 2013/12

N2 - We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6%), 2 vp H2O2 (30%) and 3 vp CH3COOH (99.8%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of Si0.8Ge0.2 layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.

AB - We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6%), 2 vp H2O2 (30%) and 3 vp CH3COOH (99.8%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of Si0.8Ge0.2 layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.

KW - Multi-layer

KW - Selective etching

KW - Si

KW - SiGe

KW - SON

UR - https://www.scopus.com/pages/publications/84890880181

U2 - 10.5573/JSTS.2013.13.6.668

DO - 10.5573/JSTS.2013.13.6.668

M3 - Journal article

AN - SCOPUS:84890880181

SN - 1598-1657

VL - 13

SP - 668

EP - 675

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

IS - 6

ER -