Selective etching of AlGaAs/GaAs structures using the solutions of citric acid/H2O2 and de-ionized H2O/buffered oxide etch

Jong Hee Kim; Dae Ho Lim; Gye Mo Yang

Selective etching of AlGaAs/GaAs structures using the solutions of citric acid/H₂O₂ and de-ionized H₂O/buffered oxide etch

Jong Hee Kim^*
, Dae Ho Lim
, Gye Mo Yang

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

76 Scopus citations

Abstract

Etching results using the solution system of citric acid/H₂O₂ and de-ionized H₂O/buffered oxide etch are shown to provide good selective wet etching of AlGaAs/GaAs structures. For Al_xGa_1-xAs (x<0.5) layers the selective characteristics of each Al composition strongly depend on the volume ratio of the citric acid/H₂O₂ solution. The turning volume ratio of the solution at whichetching starts sensitively depends on Al composition. Additionally, the etch rate of Al_yGa_1-yAs (y>0.7) qutkly decreases with decreasing Al composition in de-ionized H₂O/buffered oxide etch solution, providing a high degree of etching selectivity. These simple selective etching processes have been applied to define AlAs/GaAs distributed Bragg reflector mesas in a vertical-cavity surface-emitting laser structure.

Original language	English
Pages (from-to)	558-560
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	2
State	Published - 1998.03

Quacquarelli Symonds(QS) Subject Topics

Engineering - Electrical & Electronic
Engineering - Petroleum
Physics & Astronomy

Cite this

@article{62358f111cfd4dc09a5199fab4843ebd,

title = "Selective etching of AlGaAs/GaAs structures using the solutions of citric acid/H2O2 and de-ionized H2O/buffered oxide etch",

abstract = "Etching results using the solution system of citric acid/H2O2 and de-ionized H2O/buffered oxide etch are shown to provide good selective wet etching of AlGaAs/GaAs structures. For AlxGa1-xAs (x<0.5) layers the selective characteristics of each Al composition strongly depend on the volume ratio of the citric acid/H2O2 solution. The turning volume ratio of the solution at whichetching starts sensitively depends on Al composition. Additionally, the etch rate of AlyGa1-yAs (y>0.7) qutkly decreases with decreasing Al composition in de-ionized H2O/buffered oxide etch solution, providing a high degree of etching selectivity. These simple selective etching processes have been applied to define AlAs/GaAs distributed Bragg reflector mesas in a vertical-cavity surface-emitting laser structure.",

author = "Kim, \{Jong Hee\} and Lim, \{Dae Ho\} and Yang, \{Gye Mo\}",

year = "1998",

month = mar,

language = "English",

volume = "16",

pages = "558--560",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "2",

}

Selective etching of AlGaAs/GaAs structures using the solutions of citric acid/H₂O₂ and de-ionized H₂O/buffered oxide etch. / Kim, Jong Hee; Lim, Dae Ho; Yang, Gye Mo.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 2, 03.1998, p. 558-560.

Research output: Contribution to journal › Journal article › peer-review

TY - JOUR

T1 - Selective etching of AlGaAs/GaAs structures using the solutions of citric acid/H2O2 and de-ionized H2O/buffered oxide etch

AU - Kim, Jong Hee

AU - Lim, Dae Ho

AU - Yang, Gye Mo

PY - 1998/3

Y1 - 1998/3

N2 - Etching results using the solution system of citric acid/H2O2 and de-ionized H2O/buffered oxide etch are shown to provide good selective wet etching of AlGaAs/GaAs structures. For AlxGa1-xAs (x<0.5) layers the selective characteristics of each Al composition strongly depend on the volume ratio of the citric acid/H2O2 solution. The turning volume ratio of the solution at whichetching starts sensitively depends on Al composition. Additionally, the etch rate of AlyGa1-yAs (y>0.7) qutkly decreases with decreasing Al composition in de-ionized H2O/buffered oxide etch solution, providing a high degree of etching selectivity. These simple selective etching processes have been applied to define AlAs/GaAs distributed Bragg reflector mesas in a vertical-cavity surface-emitting laser structure.

AB - Etching results using the solution system of citric acid/H2O2 and de-ionized H2O/buffered oxide etch are shown to provide good selective wet etching of AlGaAs/GaAs structures. For AlxGa1-xAs (x<0.5) layers the selective characteristics of each Al composition strongly depend on the volume ratio of the citric acid/H2O2 solution. The turning volume ratio of the solution at whichetching starts sensitively depends on Al composition. Additionally, the etch rate of AlyGa1-yAs (y>0.7) qutkly decreases with decreasing Al composition in de-ionized H2O/buffered oxide etch solution, providing a high degree of etching selectivity. These simple selective etching processes have been applied to define AlAs/GaAs distributed Bragg reflector mesas in a vertical-cavity surface-emitting laser structure.

UR - https://www.scopus.com/pages/publications/0000651451

M3 - Journal article

AN - SCOPUS:0000651451

SN - 1071-1023

VL - 16

SP - 558

EP - 560

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

ER -

Selective etching of AlGaAs/GaAs structures using the solutions of citric acid/H₂O₂ and de-ionized H₂O/buffered oxide etch

Abstract

Quacquarelli Symonds(QS) Subject Topics

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