Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

Jun Young Park; Dong Il Moon; Myeong Lok Seol; Choong Ki Kim; Chang Hoon Jeon; Hagyoul Bae; Tewook Bang; Yang Kyu Choi

doi:10.1109/TED.2015.2513744

Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

Jun Young Park
, Dong Il Moon
, Myeong Lok Seol
, Choong Ki Kim
, Chang Hoon Jeon
, Hagyoul Bae
, Tewook Bang
, Yang Kyu Choi^*

^*Corresponding author for this work

Division of Electronic Engineering

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

34 Scopus citations

Abstract

Device degradation induced by hot-carrier injection was repaired by electrical annealing using Joule heat through a built-in heater in a gate. The concentrated high temperature anneals the gate oxide locally and the degraded device parameters are recovered or further enhanced within a short time of 1 ms. Selecting a proper range of repair voltage is very important to maximize the annealing effects and minimize the extra damages caused by excessive high temperature. The repairing voltage is related to the resistance of the poly-Si gate according to the device scaling.

Original language	English
Article number	7384486
Pages (from-to)	910-915
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	3
DOIs	https://doi.org/10.1109/TED.2015.2513744
State	Published - 2016.03

Keywords

Degradation
electrical annealing
gate-allaround (GAA)
hot-carrier injection (HCI)
Joule heat
MOSFET
nanowire
reliability
self-curable

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10.1109/TED.2015.2513744

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title = "Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection",

abstract = "Device degradation induced by hot-carrier injection was repaired by electrical annealing using Joule heat through a built-in heater in a gate. The concentrated high temperature anneals the gate oxide locally and the degraded device parameters are recovered or further enhanced within a short time of 1 ms. Selecting a proper range of repair voltage is very important to maximize the annealing effects and minimize the extra damages caused by excessive high temperature. The repairing voltage is related to the resistance of the poly-Si gate according to the device scaling.",

keywords = "Degradation, electrical annealing, gate-allaround (GAA), hot-carrier injection (HCI), Joule heat, MOSFET, nanowire, reliability, self-curable",

author = "Park, \{Jun Young\} and Moon, \{Dong Il\} and Seol, \{Myeong Lok\} and Kim, \{Choong Ki\} and Jeon, \{Chang Hoon\} and Hagyoul Bae and Tewook Bang and Choi, \{Yang Kyu\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = mar,

doi = "10.1109/TED.2015.2513744",

language = "English",

volume = "63",

pages = "910--915",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

number = "3",

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T1 - Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

AU - Park, Jun Young

AU - Moon, Dong Il

AU - Seol, Myeong Lok

AU - Kim, Choong Ki

AU - Jeon, Chang Hoon

AU - Bae, Hagyoul

AU - Bang, Tewook

AU - Choi, Yang Kyu

PY - 2016/3

Y1 - 2016/3

N2 - Device degradation induced by hot-carrier injection was repaired by electrical annealing using Joule heat through a built-in heater in a gate. The concentrated high temperature anneals the gate oxide locally and the degraded device parameters are recovered or further enhanced within a short time of 1 ms. Selecting a proper range of repair voltage is very important to maximize the annealing effects and minimize the extra damages caused by excessive high temperature. The repairing voltage is related to the resistance of the poly-Si gate according to the device scaling.

AB - Device degradation induced by hot-carrier injection was repaired by electrical annealing using Joule heat through a built-in heater in a gate. The concentrated high temperature anneals the gate oxide locally and the degraded device parameters are recovered or further enhanced within a short time of 1 ms. Selecting a proper range of repair voltage is very important to maximize the annealing effects and minimize the extra damages caused by excessive high temperature. The repairing voltage is related to the resistance of the poly-Si gate according to the device scaling.

KW - Degradation

KW - electrical annealing

KW - gate-allaround (GAA)

KW - hot-carrier injection (HCI)

KW - Joule heat

KW - MOSFET

KW - nanowire

KW - reliability

KW - self-curable

UR - https://www.scopus.com/pages/publications/84954536083

U2 - 10.1109/TED.2015.2513744

DO - 10.1109/TED.2015.2513744

M3 - Journal article

AN - SCOPUS:84954536083

SN - 0018-9383

VL - 63

SP - 910

EP - 915

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

M1 - 7384486

ER -

Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

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Keywords

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