Self-organized growth of InGaAs/GaAs/AlGaAs quantum dot heterostructures by metalorganic chemical vapor deposition

H. B. Joo; G. M. Yang; D. H. Lim; J. H. Kim; K. S. Kim; K. Y. Lim; E. K. Suh

doi:10.1016/S0022-0248(98)00721-0

Self-organized growth of InGaAs/GaAs/AlGaAs quantum dot heterostructures by metalorganic chemical vapor deposition

H. B. Joo
, G. M. Yang^*
, D. H. Lim
, J. H. Kim
, K. S. Kim
, K. Y. Lim
, E. K. Suh

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

2 Scopus citations

Abstract

Self-organized In_0.6Ga_0.4As/GaAs/AlGaAs quantum dot (QD) heterostructures were grown by metalorganic chemical vapor deposition using the Stranski-Krastanow growth mode. The atomic force microscopy image shows that the quantum dot structures are formed. The room-temperature photoluminescence (PL) measurement was employed to establish the optimized growth condition for QD structures. A strong PL emission was obtained at room temperature. Blueshifts in the PL emission from InGaAs QDs are observed as a results of postgrowth annealing and also when raising the upper cladding layer growth temperatures. Also, the strong electroluminescence at room temperature shows the possibility of QD optical device. Using the optimized growth condition, a full laser structure was fabricated by selective oxidation.

Original language	English
Pages (from-to)	161-165
Number of pages	5
Journal	Journal of Crystal Growth
Volume	194
Issue number	2
DOIs	https://doi.org/10.1016/S0022-0248(98)00721-0
State	Published - 1998.11.15

Keywords

GaAs
InGaAs
Laser diode
Quantum dot
Stranski-krastanow method

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Chemistry
Physics & Astronomy

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10.1016/S0022-0248(98)00721-0

Cite this

@article{70b5be06337a4d2683483b6d5af36dac,

title = "Self-organized growth of InGaAs/GaAs/AlGaAs quantum dot heterostructures by metalorganic chemical vapor deposition",

abstract = "Self-organized In0.6Ga0.4As/GaAs/AlGaAs quantum dot (QD) heterostructures were grown by metalorganic chemical vapor deposition using the Stranski-Krastanow growth mode. The atomic force microscopy image shows that the quantum dot structures are formed. The room-temperature photoluminescence (PL) measurement was employed to establish the optimized growth condition for QD structures. A strong PL emission was obtained at room temperature. Blueshifts in the PL emission from InGaAs QDs are observed as a results of postgrowth annealing and also when raising the upper cladding layer growth temperatures. Also, the strong electroluminescence at room temperature shows the possibility of QD optical device. Using the optimized growth condition, a full laser structure was fabricated by selective oxidation.",

keywords = "GaAs, InGaAs, Laser diode, Quantum dot, Stranski-krastanow method",

author = "Joo, \{H. B.\} and Yang, \{G. M.\} and Lim, \{D. H.\} and Kim, \{J. H.\} and Kim, \{K. S.\} and Lim, \{K. Y.\} and Suh, \{E. K.\}",

year = "1998",

month = nov,

day = "15",

doi = "10.1016/S0022-0248(98)00721-0",

language = "English",

volume = "194",

pages = "161--165",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "2",

}

TY - JOUR

T1 - Self-organized growth of InGaAs/GaAs/AlGaAs quantum dot heterostructures by metalorganic chemical vapor deposition

AU - Joo, H. B.

AU - Yang, G. M.

AU - Lim, D. H.

AU - Kim, J. H.

AU - Kim, K. S.

AU - Lim, K. Y.

AU - Suh, E. K.

PY - 1998/11/15

Y1 - 1998/11/15

N2 - Self-organized In0.6Ga0.4As/GaAs/AlGaAs quantum dot (QD) heterostructures were grown by metalorganic chemical vapor deposition using the Stranski-Krastanow growth mode. The atomic force microscopy image shows that the quantum dot structures are formed. The room-temperature photoluminescence (PL) measurement was employed to establish the optimized growth condition for QD structures. A strong PL emission was obtained at room temperature. Blueshifts in the PL emission from InGaAs QDs are observed as a results of postgrowth annealing and also when raising the upper cladding layer growth temperatures. Also, the strong electroluminescence at room temperature shows the possibility of QD optical device. Using the optimized growth condition, a full laser structure was fabricated by selective oxidation.

AB - Self-organized In0.6Ga0.4As/GaAs/AlGaAs quantum dot (QD) heterostructures were grown by metalorganic chemical vapor deposition using the Stranski-Krastanow growth mode. The atomic force microscopy image shows that the quantum dot structures are formed. The room-temperature photoluminescence (PL) measurement was employed to establish the optimized growth condition for QD structures. A strong PL emission was obtained at room temperature. Blueshifts in the PL emission from InGaAs QDs are observed as a results of postgrowth annealing and also when raising the upper cladding layer growth temperatures. Also, the strong electroluminescence at room temperature shows the possibility of QD optical device. Using the optimized growth condition, a full laser structure was fabricated by selective oxidation.

KW - GaAs

KW - InGaAs

KW - Laser diode

KW - Quantum dot

KW - Stranski-krastanow method

UR - https://www.scopus.com/pages/publications/0032476431

U2 - 10.1016/S0022-0248(98)00721-0

DO - 10.1016/S0022-0248(98)00721-0

M3 - Journal article

AN - SCOPUS:0032476431

SN - 0022-0248

VL - 194

SP - 161

EP - 165

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Self-organized growth of InGaAs/GaAs/AlGaAs quantum dot heterostructures by metalorganic chemical vapor deposition

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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