Sensitivity Analysis of Silicon Nanowire ISFET Sensor with LaF3 membrane

Hyeon Tak Kwak; Kihyun Kim; Hyeonsu Cho; M. Meyyappan; Chang Ki Baek

doi:10.1109/NANO46743.2019.8993944

Sensitivity Analysis of Silicon Nanowire ISFET Sensor with LaF₃ membrane

Hyeon Tak Kwak
, Kihyun Kim^*
, Hyeonsu Cho
, M. Meyyappan
, Chang Ki Baek

^*Corresponding author for this work

Division of Electronic Engineering

Pohang University of Science and Technology
NASA Ames Research Center

Research output: Contribution to conference › Conference paper › peer-review

Abstract

We investigate the fluoride ion sensitivity dependence on the width in silicon nanowire (SiNW) ion-sensitive field effect transistor (ISFET) sensor with polycrystalline lanthanum fluoride (poly-LaF3) sensing membrane. The poly-LaF3 sensing membrane is deposited using non-tiled thermal evaporation under substrate temperature of 600°C. The device shows excellent electrical characteristics of low subthreshold swing (SS) and high on-off current ratio as the SiNW width shrinks. The voltage sensitivity is degraded with decreasing the nanowire diameter. This degradation is caused by reduced thermal conductivity in narrow nanowire because the deposition temperature of the poly-LaF3 film is important parameter to determine voltage sensitivity. On the other hand, the sensor exhibits the highest current sensitivity in the nanowire width of 200 nm. Although the current sensitivity is significantly affected by SS, the sensitivity is degraded when the width is less than 200 nm due to degraded voltage sensitivity. These results show that the optimized diameter of SiNW is essential for highly sensitive fluoride ion ISFET sensor.

Original language	English
Title of host publication	19th IEEE International Conference on Nanotechnology, NANO 2019
Publisher	IEEE Computer Society
Pages	293-296
Number of pages	4
ISBN (Electronic)	9781728128917
DOIs	https://doi.org/10.1109/NANO46743.2019.8993944
State	Published - 2019.07
Event	19th IEEE International Conference on Nanotechnology, NANO 2019 - Macau, China Duration: 2019.07.22 → 2019.07.26

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2019-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	19th IEEE International Conference on Nanotechnology, NANO 2019
Country/Territory	China
City	Macau
Period	19.07.22 → 19.07.26

Access to Document

10.1109/NANO46743.2019.8993944

Cite this

Kwak, H. T., Kim, K., Cho, H., Meyyappan, M., & Baek, C. K. (2019). Sensitivity Analysis of Silicon Nanowire ISFET Sensor with LaF₃ membrane. In 19th IEEE International Conference on Nanotechnology, NANO 2019 (pp. 293-296). Article 8993944 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2019-July). IEEE Computer Society. https://doi.org/10.1109/NANO46743.2019.8993944

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title = "Sensitivity Analysis of Silicon Nanowire ISFET Sensor with LaF3 membrane",

abstract = "We investigate the fluoride ion sensitivity dependence on the width in silicon nanowire (SiNW) ion-sensitive field effect transistor (ISFET) sensor with polycrystalline lanthanum fluoride (poly-LaF3) sensing membrane. The poly-LaF3 sensing membrane is deposited using non-tiled thermal evaporation under substrate temperature of 600°C. The device shows excellent electrical characteristics of low subthreshold swing (SS) and high on-off current ratio as the SiNW width shrinks. The voltage sensitivity is degraded with decreasing the nanowire diameter. This degradation is caused by reduced thermal conductivity in narrow nanowire because the deposition temperature of the poly-LaF3 film is important parameter to determine voltage sensitivity. On the other hand, the sensor exhibits the highest current sensitivity in the nanowire width of 200 nm. Although the current sensitivity is significantly affected by SS, the sensitivity is degraded when the width is less than 200 nm due to degraded voltage sensitivity. These results show that the optimized diameter of SiNW is essential for highly sensitive fluoride ion ISFET sensor.",

author = "Kwak, \{Hyeon Tak\} and Kihyun Kim and Hyeonsu Cho and M. Meyyappan and Baek, \{Chang Ki\}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 19th IEEE International Conference on Nanotechnology, NANO 2019 ; Conference date: 22-07-2019 Through 26-07-2019",

year = "2019",

month = jul,

doi = "10.1109/NANO46743.2019.8993944",

language = "English",

series = "Proceedings of the IEEE Conference on Nanotechnology",

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Kwak, HT, Kim, K, Cho, H, Meyyappan, M & Baek, CK 2019, Sensitivity Analysis of Silicon Nanowire ISFET Sensor with LaF₃ membrane. in 19th IEEE International Conference on Nanotechnology, NANO 2019., 8993944, Proceedings of the IEEE Conference on Nanotechnology, vol. 2019-July, IEEE Computer Society, pp. 293-296, 19th IEEE International Conference on Nanotechnology, NANO 2019, Macau, China, 19.07.22. https://doi.org/10.1109/NANO46743.2019.8993944

Sensitivity Analysis of Silicon Nanowire ISFET Sensor with LaF₃ membrane. / Kwak, Hyeon Tak; Kim, Kihyun; Cho, Hyeonsu et al.
19th IEEE International Conference on Nanotechnology, NANO 2019. IEEE Computer Society, 2019. p. 293-296 8993944 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2019-July).

Research output: Contribution to conference › Conference paper › peer-review

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AU - Baek, Chang Ki

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N2 - We investigate the fluoride ion sensitivity dependence on the width in silicon nanowire (SiNW) ion-sensitive field effect transistor (ISFET) sensor with polycrystalline lanthanum fluoride (poly-LaF3) sensing membrane. The poly-LaF3 sensing membrane is deposited using non-tiled thermal evaporation under substrate temperature of 600°C. The device shows excellent electrical characteristics of low subthreshold swing (SS) and high on-off current ratio as the SiNW width shrinks. The voltage sensitivity is degraded with decreasing the nanowire diameter. This degradation is caused by reduced thermal conductivity in narrow nanowire because the deposition temperature of the poly-LaF3 film is important parameter to determine voltage sensitivity. On the other hand, the sensor exhibits the highest current sensitivity in the nanowire width of 200 nm. Although the current sensitivity is significantly affected by SS, the sensitivity is degraded when the width is less than 200 nm due to degraded voltage sensitivity. These results show that the optimized diameter of SiNW is essential for highly sensitive fluoride ion ISFET sensor.

AB - We investigate the fluoride ion sensitivity dependence on the width in silicon nanowire (SiNW) ion-sensitive field effect transistor (ISFET) sensor with polycrystalline lanthanum fluoride (poly-LaF3) sensing membrane. The poly-LaF3 sensing membrane is deposited using non-tiled thermal evaporation under substrate temperature of 600°C. The device shows excellent electrical characteristics of low subthreshold swing (SS) and high on-off current ratio as the SiNW width shrinks. The voltage sensitivity is degraded with decreasing the nanowire diameter. This degradation is caused by reduced thermal conductivity in narrow nanowire because the deposition temperature of the poly-LaF3 film is important parameter to determine voltage sensitivity. On the other hand, the sensor exhibits the highest current sensitivity in the nanowire width of 200 nm. Although the current sensitivity is significantly affected by SS, the sensitivity is degraded when the width is less than 200 nm due to degraded voltage sensitivity. These results show that the optimized diameter of SiNW is essential for highly sensitive fluoride ion ISFET sensor.

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