Separate extraction of source, drain, and substrate resistances in MOSFETs with parasitic junction current method

Hagyoul Bae; Seok Cheon Baek; Sunyeong Lee; Jaeman Jang; Ja Sun Shin; Daeyoun Yun; Hyojong Kim; Dae Hwan Kim; Dong Myong Kim

doi:10.1109/LED.2010.2066257

Separate extraction of source, drain, and substrate resistances in MOSFETs with parasitic junction current method

Hagyoul Bae^*
, Seok Cheon Baek
, Sunyeong Lee
, Jaeman Jang
, Ja Sun Shin
, Daeyoun Yun
, Hyojong Kim
, Dae Hwan Kim
, Dong Myong Kim

^*Corresponding author for this work

Division of Electronic Engineering

Kookmin University

Research output: Contribution to journal › Journal article › peer-review

17 Scopus citations

Abstract

The separate extraction of asymmetric source (R_S) and drain (RR_D) resistances caused by the variations in the layout, process, and device degradation is important in the practical modeling and characterization of MOSFETs and their integrated circuits. We propose a simple parasitic junction current method (PJCM) for the separate extraction of R _S, R_D, and R_SUB (substrate resistance) in MOSFETs. We applied the proposed PJCM to n-channel MOSFETs with different W/L combinations and verified its usefulness in the robust extraction of R _S, R_D, and R_SUB.

Original language	English
Article number	5582196
Pages (from-to)	1190-1192
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	11
DOIs	https://doi.org/10.1109/LED.2010.2066257
State	Published - 2010.11

Keywords

Drain resistance
MOSFET
parameter extraction
parasitic junction
parasitic resistance
source resistance
substrate resistance

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10.1109/LED.2010.2066257

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title = "Separate extraction of source, drain, and substrate resistances in MOSFETs with parasitic junction current method",

abstract = "The separate extraction of asymmetric source (RS) and drain (RRD) resistances caused by the variations in the layout, process, and device degradation is important in the practical modeling and characterization of MOSFETs and their integrated circuits. We propose a simple parasitic junction current method (PJCM) for the separate extraction of R S, RD, and RSUB (substrate resistance) in MOSFETs. We applied the proposed PJCM to n-channel MOSFETs with different W/L combinations and verified its usefulness in the robust extraction of R S, RD, and RSUB.",

keywords = "Drain resistance, MOSFET, parameter extraction, parasitic junction, parasitic resistance, source resistance, substrate resistance",

author = "Hagyoul Bae and Baek, \{Seok Cheon\} and Sunyeong Lee and Jaeman Jang and Shin, \{Ja Sun\} and Daeyoun Yun and Hyojong Kim and Kim, \{Dae Hwan\} and Kim, \{Dong Myong\}",

year = "2010",

month = nov,

doi = "10.1109/LED.2010.2066257",

language = "English",

volume = "31",

pages = "1190--1192",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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TY - JOUR

T1 - Separate extraction of source, drain, and substrate resistances in MOSFETs with parasitic junction current method

AU - Bae, Hagyoul

AU - Baek, Seok Cheon

AU - Lee, Sunyeong

AU - Jang, Jaeman

AU - Shin, Ja Sun

AU - Yun, Daeyoun

AU - Kim, Hyojong

AU - Kim, Dae Hwan

AU - Kim, Dong Myong

PY - 2010/11

Y1 - 2010/11

N2 - The separate extraction of asymmetric source (RS) and drain (RRD) resistances caused by the variations in the layout, process, and device degradation is important in the practical modeling and characterization of MOSFETs and their integrated circuits. We propose a simple parasitic junction current method (PJCM) for the separate extraction of R S, RD, and RSUB (substrate resistance) in MOSFETs. We applied the proposed PJCM to n-channel MOSFETs with different W/L combinations and verified its usefulness in the robust extraction of R S, RD, and RSUB.

AB - The separate extraction of asymmetric source (RS) and drain (RRD) resistances caused by the variations in the layout, process, and device degradation is important in the practical modeling and characterization of MOSFETs and their integrated circuits. We propose a simple parasitic junction current method (PJCM) for the separate extraction of R S, RD, and RSUB (substrate resistance) in MOSFETs. We applied the proposed PJCM to n-channel MOSFETs with different W/L combinations and verified its usefulness in the robust extraction of R S, RD, and RSUB.

KW - Drain resistance

KW - MOSFET

KW - parameter extraction

KW - parasitic junction

KW - parasitic resistance

KW - source resistance

KW - substrate resistance

UR - https://www.scopus.com/pages/publications/78049232300

U2 - 10.1109/LED.2010.2066257

DO - 10.1109/LED.2010.2066257

M3 - Journal article

AN - SCOPUS:78049232300

SN - 0741-3106

VL - 31

SP - 1190

EP - 1192

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 5582196

ER -

Separate extraction of source, drain, and substrate resistances in MOSFETs with parasitic junction current method

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Keywords

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