Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide semiconductor thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics

Hagyoul Bae; Sungwoo Jun; Hyunjun Choi; Chunhyung Jo; Yun Hyeok Kim; Jun Seok Hwang; Jaeyeop Ahn; Sung Jin Choi; Dae Hwan Kim; Dong Myong Kim

doi:10.1002/j.2168-0159.2013.tb06399.x

Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide semiconductor thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics

Hagyoul Bae
, Sungwoo Jun
, Hyunjun Choi
, Chunhyung Jo
, Yun Hyeok Kim
, Jun Seok Hwang
, Jaeyeop Ahn
, Sung Jin Choi
, Dae Hwan Kim
, Dong Myong Kim

Division of Electronic Engineering

Kookmin University

Research output: Contribution to journal › Journal article › peer-review

Abstract

We report an extraction technique based on experimental data for intrinsic donor- and acceptor-like subgap density-of-states (DOS) over the full-energy range (E_C<E<E_V) by using one-shot monochromatic photonic capacitance-voltage (MPCV) characteristics in n-channel a-IGZO TFTs.

Original language	English
Pages (from-to)	1033-1036
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	44
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2013.tb06399.x
State	Published - 2013.06

Keywords

Amorphous oxide semiconductor thin-film transistors
density-of-states (DOS)
donor- and acceptor-like DOS
extraction
indium-gallium-zinc- oxide
photonic capacitance-voltage measurement

Access to Document

10.1002/j.2168-0159.2013.tb06399.x

Fingerprint

Dive into the research topics of 'Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide semiconductor thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics'. Together they form a unique fingerprint.

Cite this

Bae, H., Jun, S., Choi, H., Jo, C., Kim, Y. H., Hwang, J. S., Ahn, J., Choi, S. J., Kim, D. H., & Kim, D. M. (2013). Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide semiconductor thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics. Digest of Technical Papers - SID International Symposium, 44(1), 1033-1036. https://doi.org/10.1002/j.2168-0159.2013.tb06399.x

Bae, Hagyoul ; Jun, Sungwoo ; Choi, Hyunjun et al. / Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide semiconductor thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics. In: Digest of Technical Papers - SID International Symposium. 2013 ; Vol. 44, No. 1. pp. 1033-1036.

@article{ba3e812929714fc3828183713edf5a12,

title = "Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide semiconductor thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics",

abstract = "We report an extraction technique based on experimental data for intrinsic donor- and acceptor-like subgap density-of-states (DOS) over the full-energy range (ECV) by using one-shot monochromatic photonic capacitance-voltage (MPCV) characteristics in n-channel a-IGZO TFTs.",

keywords = "Amorphous oxide semiconductor thin-film transistors, density-of-states (DOS), donor- and acceptor-like DOS, extraction, indium-gallium-zinc- oxide, photonic capacitance-voltage measurement",

author = "Hagyoul Bae and Sungwoo Jun and Hyunjun Choi and Chunhyung Jo and Kim, \{Yun Hyeok\} and Hwang, \{Jun Seok\} and Jaeyeop Ahn and Choi, \{Sung Jin\} and Kim, \{Dae Hwan\} and Kim, \{Dong Myong\}",

year = "2013",

month = jun,

doi = "10.1002/j.2168-0159.2013.tb06399.x",

language = "English",

volume = "44",

pages = "1033--1036",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "1",

}

Bae, H, Jun, S, Choi, H, Jo, C, Kim, YH, Hwang, JS, Ahn, J, Choi, SJ, Kim, DH & Kim, DM 2013, 'Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide semiconductor thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics', Digest of Technical Papers - SID International Symposium, vol. 44, no. 1, pp. 1033-1036. https://doi.org/10.1002/j.2168-0159.2013.tb06399.x

Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide semiconductor thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics. / Bae, Hagyoul; Jun, Sungwoo; Choi, Hyunjun et al.
In: Digest of Technical Papers - SID International Symposium, Vol. 44, No. 1, 06.2013, p. 1033-1036.

Research output: Contribution to journal › Journal article › peer-review

TY - JOUR

T1 - Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide semiconductor thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics

AU - Bae, Hagyoul

AU - Jun, Sungwoo

AU - Choi, Hyunjun

AU - Jo, Chunhyung

AU - Kim, Yun Hyeok

AU - Hwang, Jun Seok

AU - Ahn, Jaeyeop

AU - Choi, Sung Jin

AU - Kim, Dae Hwan

AU - Kim, Dong Myong

PY - 2013/6

Y1 - 2013/6

N2 - We report an extraction technique based on experimental data for intrinsic donor- and acceptor-like subgap density-of-states (DOS) over the full-energy range (ECV) by using one-shot monochromatic photonic capacitance-voltage (MPCV) characteristics in n-channel a-IGZO TFTs.

AB - We report an extraction technique based on experimental data for intrinsic donor- and acceptor-like subgap density-of-states (DOS) over the full-energy range (ECV) by using one-shot monochromatic photonic capacitance-voltage (MPCV) characteristics in n-channel a-IGZO TFTs.

KW - Amorphous oxide semiconductor thin-film transistors

KW - density-of-states (DOS)

KW - donor- and acceptor-like DOS

KW - extraction

KW - indium-gallium-zinc- oxide

KW - photonic capacitance-voltage measurement

UR - https://www.scopus.com/pages/publications/84905278348

U2 - 10.1002/j.2168-0159.2013.tb06399.x

DO - 10.1002/j.2168-0159.2013.tb06399.x

M3 - Journal article

AN - SCOPUS:84905278348

SN - 0097-966X

VL - 44

SP - 1033

EP - 1036

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

ER -

Bae H, Jun S, Choi H, Jo C, Kim YH, Hwang JS et al. Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide semiconductor thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics. Digest of Technical Papers - SID International Symposium. 2013 Jun;44(1):1033-1036. doi: 10.1002/j.2168-0159.2013.tb06399.x

Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide semiconductor thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this