Silicon oxide film deposited at room temperatures using high-working-pressure plasma-enhanced chemical vapor deposition: Effect of O2 flow rate

Young Soo Lee; Seung Hwan Lee; Jung Dae Kwon; Ji Hoon Ahn; Jin Seong Park

doi:10.1016/j.ceramint.2017.05.095

Silicon oxide film deposited at room temperatures using high-working-pressure plasma-enhanced chemical vapor deposition: Effect of O₂ flow rate

Young Soo Lee
, Seung Hwan Lee
, Jung Dae Kwon^*
, Ji Hoon Ahn
, Jin Seong Park

^*Corresponding author for this work

Major of Mineral Resources and Energy Engineering

Hanyang University
Korea Institute of Materials Science
Korea Maritime and Ocean University

Research output: Contribution to journal › Journal article › peer-review

5 Scopus citations

Abstract

Silicon oxide films were deposited by high-working-pressure plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and O₂/He plasma as the precursor and the reactant, respectively. As the O₂ flow rate increased during the process, the plasma density of O₂ and He decreased due to reduction in the partial pressure of He, which affected the composition of O/Si in the silicon oxide films. Consequently, we found out that the compositional ratio of SiO₂/SiO could be modulated by O₂ flow conditions during the high-working-pressure plasma-enhanced chemical vapor deposition process. Additionally, it was observed that the water vapor transmission rate reduced with an increase in the O₂ flow rate because of a compositional change in the silicon oxide films.

Original language	English
Pages (from-to)	10628-10631
Number of pages	4
Journal	Ceramics International
Volume	43
Issue number	13
DOIs	https://doi.org/10.1016/j.ceramint.2017.05.095
State	Published - 2017

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

A: Silicon oxide
B: High working pressure plasma-enhanced chemical vapor deposition
C: Thin films
D: Water permeation property

Access to Document

10.1016/j.ceramint.2017.05.095

Cite this

@article{722ce4e6037a4e5caa2261752fafd987,

title = "Silicon oxide film deposited at room temperatures using high-working-pressure plasma-enhanced chemical vapor deposition: Effect of O2 flow rate",

abstract = "Silicon oxide films were deposited by high-working-pressure plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and O2/He plasma as the precursor and the reactant, respectively. As the O2 flow rate increased during the process, the plasma density of O2 and He decreased due to reduction in the partial pressure of He, which affected the composition of O/Si in the silicon oxide films. Consequently, we found out that the compositional ratio of SiO2/SiO could be modulated by O2 flow conditions during the high-working-pressure plasma-enhanced chemical vapor deposition process. Additionally, it was observed that the water vapor transmission rate reduced with an increase in the O2 flow rate because of a compositional change in the silicon oxide films.",

keywords = "A: Silicon oxide, B: High working pressure plasma-enhanced chemical vapor deposition, C: Thin films, D: Water permeation property",

author = "Lee, \{Young Soo\} and Lee, \{Seung Hwan\} and Kwon, \{Jung Dae\} and Ahn, \{Ji Hoon\} and Park, \{Jin Seong\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd and Techna Group S.r.l.",

year = "2017",

doi = "10.1016/j.ceramint.2017.05.095",

language = "English",

volume = "43",

pages = "10628--10631",

journal = "Ceramics International",

issn = "0272-8842",

number = "13",

}

TY - JOUR

T1 - Silicon oxide film deposited at room temperatures using high-working-pressure plasma-enhanced chemical vapor deposition

T2 - Effect of O2 flow rate

AU - Lee, Young Soo

AU - Lee, Seung Hwan

AU - Kwon, Jung Dae

AU - Ahn, Ji Hoon

AU - Park, Jin Seong

PY - 2017

Y1 - 2017

N2 - Silicon oxide films were deposited by high-working-pressure plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and O2/He plasma as the precursor and the reactant, respectively. As the O2 flow rate increased during the process, the plasma density of O2 and He decreased due to reduction in the partial pressure of He, which affected the composition of O/Si in the silicon oxide films. Consequently, we found out that the compositional ratio of SiO2/SiO could be modulated by O2 flow conditions during the high-working-pressure plasma-enhanced chemical vapor deposition process. Additionally, it was observed that the water vapor transmission rate reduced with an increase in the O2 flow rate because of a compositional change in the silicon oxide films.

AB - Silicon oxide films were deposited by high-working-pressure plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and O2/He plasma as the precursor and the reactant, respectively. As the O2 flow rate increased during the process, the plasma density of O2 and He decreased due to reduction in the partial pressure of He, which affected the composition of O/Si in the silicon oxide films. Consequently, we found out that the compositional ratio of SiO2/SiO could be modulated by O2 flow conditions during the high-working-pressure plasma-enhanced chemical vapor deposition process. Additionally, it was observed that the water vapor transmission rate reduced with an increase in the O2 flow rate because of a compositional change in the silicon oxide films.

KW - A: Silicon oxide

KW - B: High working pressure plasma-enhanced chemical vapor deposition

KW - C: Thin films

KW - D: Water permeation property

UR - https://www.scopus.com/pages/publications/85019446651

U2 - 10.1016/j.ceramint.2017.05.095

DO - 10.1016/j.ceramint.2017.05.095

M3 - Journal article

AN - SCOPUS:85019446651

SN - 0272-8842

VL - 43

SP - 10628

EP - 10631

JO - Ceramics International

JF - Ceramics International

IS - 13

ER -