Simultaneous growth of graphene and vertically aligned single-walled carbon nanotubes at low temperature by chemical vapor deposition

  • Suck Won Hong
  • , Kwang Ho Kim
  • , Hyun Kyung Jung
  • , Daesuk Kim*
  • , Hyung Woo Lee
  • *Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

Abstract

We present the simultaneous growth of single-walled carbon nanotubes and graphene with the optimal conditions of the synthesizing parameters. The dense and vertically aligned SWNTs having the length of over 100 μm was grown by 2 nm-thick Fe catalytic layer. From 650 °C, the vertically well-grown SWNTs were obtained by increasing the temperature. The severallayered graphene was synthesized with the gas mixing ratio of 15: 1(H 2: C 2H 2) at 650 °C and higher temperatures. With these optimal conditions, the vertically well-grown SWNTs and the several-layered graphene were synthesized simultaneously. The presence of SWNTs and the layer of graphene were verified by field emission scanning electron microscopy and high resolution transmission electron microscopy. From the result of this simultaneous synthesizing approach, the possibility of one step growth process of CNTs and grapheme could be verified.

Original languageEnglish
Pages (from-to)s154-s157
JournalJournal of Ceramic Processing Research
Volume13
Issue numberSUPPL. 1
StatePublished - 2012

Keywords

  • Chemical vapor deposition
  • Graphene
  • Simultaneous growth
  • Single-walled carbon nanotube

Quacquarelli Symonds(QS) Subject Topics

  • Materials Science

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