Simultaneous Observation of Donor- and Acceptor-like Interface Trap Density in 5-Stage Si-NW GAA FETs Using Polychromatic Photonic I-V Characteristics

Soohyun Lim; Jaewook Yoo; Hongseung Lee; Seongbin Lim; Minah Park; Seohyeon Park; Sojin Jung; Donghyeon Lee; Sieun Lee; Dongsun Shin; Junhui Park; Yang Kyu Choi; Hagyoul Bae

doi:10.1109/LED.2026.3677591

Simultaneous Observation of Donor- and Acceptor-like Interface Trap Density in 5-Stage Si-NW GAA FETs Using Polychromatic Photonic I-V Characteristics

Soohyun Lim^*
, Jaewook Yoo
, Hongseung Lee
, Seongbin Lim
, Minah Park
, Seohyeon Park
, Sojin Jung
, Donghyeon Lee
, Sieun Lee
, Dongsun Shin
, Junhui Park
, Yang Kyu Choi
, Hagyoul Bae

^*Corresponding author for this work

Division of Electronic Engineering

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

Abstract

In this study, we analyzed the interface trap density (D_it) of 5-stage silicon-nanowires (Si-NWs) gate-all-around (GAA) field-effect-transistors (FETs) using polychromatic photonic current-voltage technique in a single device. We modeled photoresponsive differential body factor as a function of gate voltage (V_GS) and extracted donor-like D_it (D_{it_D}) derived from the difference in the photoresponsive differential body factors. In contrast, acceptor-like D_it (D_{it_A}) was extracted at the dark state. D_{it_D} and D_{it_A} are extracted under two different V_GS regions: D_{it_A} for between the flat band voltage (V_FB) and the threshold voltage (V_T), and D_{it_D} for between V_on and V_FB. Accordingly, positive-bias-stress (PBS) was applied to analyze the change in D_it before and after PBS.

Original language	English
Journal	IEEE Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2026.3677591
State	Accepted/In press - 2026

Keywords

Energy levels
interface trap density
photoresponsivity
vertically-stacked gate-all-around (GAA) field effect transistors (FETs)

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10.1109/LED.2026.3677591

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Lim, S., Yoo, J., Lee, H., Lim, S., Park, M., Park, S., Jung, S., Lee, D., Lee, S., Shin, D., Park, J., Choi, Y. K., & Bae, H. (Accepted/In press). Simultaneous Observation of Donor- and Acceptor-like Interface Trap Density in 5-Stage Si-NW GAA FETs Using Polychromatic Photonic I-V Characteristics. IEEE Electron Device Letters. https://doi.org/10.1109/LED.2026.3677591

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title = "Simultaneous Observation of Donor- and Acceptor-like Interface Trap Density in 5-Stage Si-NW GAA FETs Using Polychromatic Photonic I-V Characteristics",

abstract = "In this study, we analyzed the interface trap density (Dit) of 5-stage silicon-nanowires (Si-NWs) gate-all-around (GAA) field-effect-transistors (FETs) using polychromatic photonic current-voltage technique in a single device. We modeled photoresponsive differential body factor as a function of gate voltage (VGS) and extracted donor-like Dit (Dit\_D) derived from the difference in the photoresponsive differential body factors. In contrast, acceptor-like Dit (Dit\_A) was extracted at the dark state. Dit\_D and Dit\_A are extracted under two different VGS regions: Dit\_A for between the flat band voltage (VFB) and the threshold voltage (VT), and Dit\_D for between Von and VFB. Accordingly, positive-bias-stress (PBS) was applied to analyze the change in Dit before and after PBS.",

keywords = "Energy levels, interface trap density, photoresponsivity, vertically-stacked gate-all-around (GAA) field effect transistors (FETs)",

author = "Soohyun Lim and Jaewook Yoo and Hongseung Lee and Seongbin Lim and Minah Park and Seohyeon Park and Sojin Jung and Donghyeon Lee and Sieun Lee and Dongsun Shin and Junhui Park and Choi, \{Yang Kyu\} and Hagyoul Bae",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2026",

doi = "10.1109/LED.2026.3677591",

language = "English",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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T1 - Simultaneous Observation of Donor- and Acceptor-like Interface Trap Density in 5-Stage Si-NW GAA FETs Using Polychromatic Photonic I-V Characteristics

AU - Lim, Soohyun

AU - Yoo, Jaewook

AU - Lee, Hongseung

AU - Lim, Seongbin

AU - Park, Minah

AU - Park, Seohyeon

AU - Jung, Sojin

AU - Lee, Donghyeon

AU - Lee, Sieun

AU - Shin, Dongsun

AU - Park, Junhui

AU - Choi, Yang Kyu

AU - Bae, Hagyoul

PY - 2026

Y1 - 2026

N2 - In this study, we analyzed the interface trap density (Dit) of 5-stage silicon-nanowires (Si-NWs) gate-all-around (GAA) field-effect-transistors (FETs) using polychromatic photonic current-voltage technique in a single device. We modeled photoresponsive differential body factor as a function of gate voltage (VGS) and extracted donor-like Dit (Dit_D) derived from the difference in the photoresponsive differential body factors. In contrast, acceptor-like Dit (Dit_A) was extracted at the dark state. Dit_D and Dit_A are extracted under two different VGS regions: Dit_A for between the flat band voltage (VFB) and the threshold voltage (VT), and Dit_D for between Von and VFB. Accordingly, positive-bias-stress (PBS) was applied to analyze the change in Dit before and after PBS.

AB - In this study, we analyzed the interface trap density (Dit) of 5-stage silicon-nanowires (Si-NWs) gate-all-around (GAA) field-effect-transistors (FETs) using polychromatic photonic current-voltage technique in a single device. We modeled photoresponsive differential body factor as a function of gate voltage (VGS) and extracted donor-like Dit (Dit_D) derived from the difference in the photoresponsive differential body factors. In contrast, acceptor-like Dit (Dit_A) was extracted at the dark state. Dit_D and Dit_A are extracted under two different VGS regions: Dit_A for between the flat band voltage (VFB) and the threshold voltage (VT), and Dit_D for between Von and VFB. Accordingly, positive-bias-stress (PBS) was applied to analyze the change in Dit before and after PBS.

KW - Energy levels

KW - interface trap density

KW - photoresponsivity

KW - vertically-stacked gate-all-around (GAA) field effect transistors (FETs)

UR - https://www.scopus.com/pages/publications/105034164606

U2 - 10.1109/LED.2026.3677591

DO - 10.1109/LED.2026.3677591

M3 - Journal article

AN - SCOPUS:105034164606

SN - 0741-3106

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Simultaneous Observation of Donor- and Acceptor-like Interface Trap Density in 5-Stage Si-NW GAA FETs Using Polychromatic Photonic I-V Characteristics

Abstract

Keywords

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