Abstract
This paper describes dynamic spectro-ellipsometric interferometry (DSEI), which simultaneously measures ultra-thin film thickness and surface profile non-destructively. The proposed snapshot-scheme DSEI system can provide a cross-sectional image of a sub-100 nm non-uniform thin film object deposited on a warped substrate. This unique measurement capability is enabled by combining spectral interferometry (SI) with dynamic spectroscopic imaging ellipsometry (DSIE) employing a monolithic spectral polarizing interferometric module. In this study, we present a method for obtaining a real cross-sectional thickness line profile by compensating for the nonlinear phase term introduced by the ultra-thin film. To evaluate the effectiveness of the proposed compensation method and measurement reliability, a SiO2/Si step-shape sample is measured and analyzed. We demonstrate that the proposed DSEI system can provide non-uniform thin film thickness and substrate warpage profiles with nanometer-level vertical resolution and a large field of view of 10 mm.
| Original language | English |
|---|---|
| Pages (from-to) | 4694-4708 |
| Number of pages | 15 |
| Journal | Optics Express |
| Volume | 34 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2026.02.9 |
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