Abstract
Silicon nanowires (SiNWs) are promising structures with excellent photovoltaic properties for low-cost, high-efficiency solar cells and have the potential to overcome the limits of bulk silicon solar cells. There is still a need to enhance light absorption in SiNWs without increasing the surface area. Here, we introduce a novel design, hourglass-shaped silicon nanowire (HG-SiNW) to significantly increase the light-Trapping path. Electrical and optical measurements show the superiority of HG-SiNW as an antireflective layer. In addition, whispering gallery mode identified by optical simulations accounts for the greatly improved absorption at the broadband solar spectrum. The HG-SiNW solar cells show an increase in short-circuit current (JSC) and 1.85 times higher efficiency with only simple diameter variations.
| Original language | English |
|---|---|
| Article number | 8964577 |
| Pages (from-to) | 475-479 |
| Number of pages | 5 |
| Journal | IEEE Journal of Photovoltaics |
| Volume | 10 |
| Issue number | 2 |
| DOIs | |
| State | Published - 2020.03 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Antireflection
- light absorption
- photovoltaics (PVs)
- silicon (Si) nanostructures
- whispering gallery mode (WGM)
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