Solid incorporation of AlGaN and influence of growth interruption on GaN/AlGaN quantum well structures grown by MOCVD

S. C. Choi; J. H. Kim; J. Y. Choi; G. M. Yang

doi:10.1002/(SICI)1521-396X(199911)176:1<263::AID-PSSA263>3.0.CO;2-Q

Solid incorporation of AlGaN and influence of growth interruption on GaN/AlGaN quantum well structures grown by MOCVD

S. C. Choi^*
, J. H. Kim
, J. Y. Choi
, G. M. Yang

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The AlGaN alloys and GaN/Al_0.16Ga_0.84N single quantum well structures have been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) with growth condition varied. Both the Al composition and the growth rate of AlGaN are strongly affected by gas-phase parasitic reaction between ammonia and TMA1. We achieved a high Hall mobility of 270 cm²/Vs at room temperature in Al_0.075Ga_0.925N grown under the optimum source flow rate. In addition, the influence of growth interruption on the optical quality of GaN/AlGaN single quantum well (QW) structures was studied to realize high-quality QWs. Photoluminescence measurements revealed that the emission peak is blue-shifted as the interruption time increases and the emission intensity is maximized at a second short interruption time.

Original language	English
Pages (from-to)	263-267
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	176
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-396X(199911)176:1<263::AID-PSSA263>3.0.CO;2-Q
State	Published - 1999.11
Event	Proceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France Duration: 1999.07.4 → 1999.07.9

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

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10.1002/(SICI)1521-396X(199911)176:1<263::AID-PSSA263>3.0.CO;2-Q

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@article{3c29797b8bc9476689ee32ee1a8085df,

title = "Solid incorporation of AlGaN and influence of growth interruption on GaN/AlGaN quantum well structures grown by MOCVD",

abstract = "The AlGaN alloys and GaN/Al0.16Ga0.84N single quantum well structures have been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) with growth condition varied. Both the Al composition and the growth rate of AlGaN are strongly affected by gas-phase parasitic reaction between ammonia and TMA1. We achieved a high Hall mobility of 270 cm2/Vs at room temperature in Al0.075Ga0.925N grown under the optimum source flow rate. In addition, the influence of growth interruption on the optical quality of GaN/AlGaN single quantum well (QW) structures was studied to realize high-quality QWs. Photoluminescence measurements revealed that the emission peak is blue-shifted as the interruption time increases and the emission intensity is maximized at a second short interruption time.",

author = "Choi, \{S. C.\} and Kim, \{J. H.\} and Choi, \{J. Y.\} and Yang, \{G. M.\}",

year = "1999",

month = nov,

doi = "10.1002/(SICI)1521-396X(199911)176:1<263::AID-PSSA263>3.0.CO;2-Q",

language = "English",

volume = "176",

pages = "263--267",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

number = "1",

note = "Proceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) ; Conference date: 04-07-1999 Through 09-07-1999",

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TY - JOUR

T1 - Solid incorporation of AlGaN and influence of growth interruption on GaN/AlGaN quantum well structures grown by MOCVD

AU - Choi, S. C.

AU - Kim, J. H.

AU - Choi, J. Y.

AU - Yang, G. M.

PY - 1999/11

Y1 - 1999/11

N2 - The AlGaN alloys and GaN/Al0.16Ga0.84N single quantum well structures have been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) with growth condition varied. Both the Al composition and the growth rate of AlGaN are strongly affected by gas-phase parasitic reaction between ammonia and TMA1. We achieved a high Hall mobility of 270 cm2/Vs at room temperature in Al0.075Ga0.925N grown under the optimum source flow rate. In addition, the influence of growth interruption on the optical quality of GaN/AlGaN single quantum well (QW) structures was studied to realize high-quality QWs. Photoluminescence measurements revealed that the emission peak is blue-shifted as the interruption time increases and the emission intensity is maximized at a second short interruption time.

AB - The AlGaN alloys and GaN/Al0.16Ga0.84N single quantum well structures have been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) with growth condition varied. Both the Al composition and the growth rate of AlGaN are strongly affected by gas-phase parasitic reaction between ammonia and TMA1. We achieved a high Hall mobility of 270 cm2/Vs at room temperature in Al0.075Ga0.925N grown under the optimum source flow rate. In addition, the influence of growth interruption on the optical quality of GaN/AlGaN single quantum well (QW) structures was studied to realize high-quality QWs. Photoluminescence measurements revealed that the emission peak is blue-shifted as the interruption time increases and the emission intensity is maximized at a second short interruption time.

UR - https://www.scopus.com/pages/publications/0033221346

U2 - 10.1002/(SICI)1521-396X(199911)176:1<263::AID-PSSA263>3.0.CO;2-Q

DO - 10.1002/(SICI)1521-396X(199911)176:1<263::AID-PSSA263>3.0.CO;2-Q

M3 - Conference article

AN - SCOPUS:0033221346

SN - 0031-8965

VL - 176

SP - 263

EP - 267

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

T2 - Proceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99)

Y2 - 4 July 1999 through 9 July 1999

ER -

Solid incorporation of AlGaN and influence of growth interruption on GaN/AlGaN quantum well structures grown by MOCVD

Abstract

Quacquarelli Symonds(QS) Subject Topics

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