Spatial distribution of defects generated by hyperthermal Ar+ impact onto graphite

J. R. Hahn; H. Kang

doi:10.1016/S0039-6028(99)01162-0

Spatial distribution of defects generated by hyperthermal Ar⁺ impact onto graphite

J. R. Hahn^*
, H. Kang

^*Corresponding author for this work

Department of Chemistry

Pohang University of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

23 Scopus citations

Abstract

We report the spatial distribution of defects generated by low energy (50-500 eV) impact of Ar⁺ ions onto a graphite surface. By using scanning tunneling microscopy and O₂ oxidative etching, the vertical distribution of ion-induced defects is measured. The threshold energy is determined for ion penetration into each of graphite layers. The lateral range of Ar travel in interlayer space is measured from pair correlation analysis of carbon vacancies and Ar interstitials.

Original language	English
Pages (from-to)	L77-L82
Journal	Surface Science
Volume	446
Issue number	1-2
DOIs	https://doi.org/10.1016/S0039-6028(99)01162-0
State	Published - 2000.02.1

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10.1016/S0039-6028(99)01162-0

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title = "Spatial distribution of defects generated by hyperthermal Ar+ impact onto graphite",

abstract = "We report the spatial distribution of defects generated by low energy (50-500 eV) impact of Ar+ ions onto a graphite surface. By using scanning tunneling microscopy and O2 oxidative etching, the vertical distribution of ion-induced defects is measured. The threshold energy is determined for ion penetration into each of graphite layers. The lateral range of Ar travel in interlayer space is measured from pair correlation analysis of carbon vacancies and Ar interstitials.",

author = "Hahn, \{J. R.\} and H. Kang",

year = "2000",

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T1 - Spatial distribution of defects generated by hyperthermal Ar+ impact onto graphite

AU - Hahn, J. R.

AU - Kang, H.

PY - 2000/2/1

Y1 - 2000/2/1

N2 - We report the spatial distribution of defects generated by low energy (50-500 eV) impact of Ar+ ions onto a graphite surface. By using scanning tunneling microscopy and O2 oxidative etching, the vertical distribution of ion-induced defects is measured. The threshold energy is determined for ion penetration into each of graphite layers. The lateral range of Ar travel in interlayer space is measured from pair correlation analysis of carbon vacancies and Ar interstitials.

AB - We report the spatial distribution of defects generated by low energy (50-500 eV) impact of Ar+ ions onto a graphite surface. By using scanning tunneling microscopy and O2 oxidative etching, the vertical distribution of ion-induced defects is measured. The threshold energy is determined for ion penetration into each of graphite layers. The lateral range of Ar travel in interlayer space is measured from pair correlation analysis of carbon vacancies and Ar interstitials.

UR - https://www.scopus.com/pages/publications/0034140846

U2 - 10.1016/S0039-6028(99)01162-0

DO - 10.1016/S0039-6028(99)01162-0

M3 - Journal article

AN - SCOPUS:0034140846

SN - 0039-6028

VL - 446

SP - L77-L82

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Spatial distribution of defects generated by hyperthermal Ar⁺ impact onto graphite

Abstract

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