Spectroscopic evidence for limited carrier hopping interaction in amorphous ZnO thin film

Deok Yong Cho; Jeong Hwan Kim; Kwang Duk Na; Jaewon Song; Cheol Seong Hwang; Byeong Gyu Park; Jae Young Kim; Chul Hee Min; Se Jung Oh

doi:10.1063/1.3275738

Spectroscopic evidence for limited carrier hopping interaction in amorphous ZnO thin film

Deok Yong Cho^*
, Jeong Hwan Kim
, Kwang Duk Na
, Jaewon Song
, Cheol Seong Hwang
, Byeong Gyu Park
, Jae Young Kim
, Chul Hee Min
, Se Jung Oh

^*Corresponding author for this work

Department of Physics

Sungkyunkwan University
Seoul National University
Pohang University of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

41 Scopus citations

Abstract

The electronic structure of amorphous ZnO film (a-ZnO) was examined by O K- and Zn L₃-edge x-ray absorption spectroscopy and valence band photoemission spectroscopy. Comparative studies of a -ZnO and a wurtzite ZnO (w -ZnO) revealed a decrease in Zn 4s-O 2p hybridization strength and the localization of Zn 4s band as a consequence of local structural disorder, indicating limited electron hopping interactions in a -ZnO. The 0.1 eV higher Fermi-level of a -ZnO compared to w -ZnO suggests that the electrical properties of a -ZnO are different from those in w -ZnO due to structural disorder, even in the absence of impurities or grain boundaries.

Original language	English
Article number	261903
Journal	Applied Physics Letters
Volume	95
Issue number	26
DOIs	https://doi.org/10.1063/1.3275738
State	Published - 2009

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10.1063/1.3275738

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@article{0a3d742539ca468884e7bade5d78598d,

title = "Spectroscopic evidence for limited carrier hopping interaction in amorphous ZnO thin film",

abstract = "The electronic structure of amorphous ZnO film (a-ZnO) was examined by O K- and Zn L3-edge x-ray absorption spectroscopy and valence band photoemission spectroscopy. Comparative studies of a -ZnO and a wurtzite ZnO (w -ZnO) revealed a decrease in Zn 4s-O 2p hybridization strength and the localization of Zn 4s band as a consequence of local structural disorder, indicating limited electron hopping interactions in a -ZnO. The 0.1 eV higher Fermi-level of a -ZnO compared to w -ZnO suggests that the electrical properties of a -ZnO are different from those in w -ZnO due to structural disorder, even in the absence of impurities or grain boundaries.",

author = "Cho, \{Deok Yong\} and Kim, \{Jeong Hwan\} and Na, \{Kwang Duk\} and Jaewon Song and Hwang, \{Cheol Seong\} and Park, \{Byeong Gyu\} and Kim, \{Jae Young\} and Min, \{Chul Hee\} and Oh, \{Se Jung\}",

year = "2009",

doi = "10.1063/1.3275738",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "26",

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TY - JOUR

T1 - Spectroscopic evidence for limited carrier hopping interaction in amorphous ZnO thin film

AU - Cho, Deok Yong

AU - Kim, Jeong Hwan

AU - Na, Kwang Duk

AU - Song, Jaewon

AU - Hwang, Cheol Seong

AU - Park, Byeong Gyu

AU - Kim, Jae Young

AU - Min, Chul Hee

AU - Oh, Se Jung

PY - 2009

Y1 - 2009

N2 - The electronic structure of amorphous ZnO film (a-ZnO) was examined by O K- and Zn L3-edge x-ray absorption spectroscopy and valence band photoemission spectroscopy. Comparative studies of a -ZnO and a wurtzite ZnO (w -ZnO) revealed a decrease in Zn 4s-O 2p hybridization strength and the localization of Zn 4s band as a consequence of local structural disorder, indicating limited electron hopping interactions in a -ZnO. The 0.1 eV higher Fermi-level of a -ZnO compared to w -ZnO suggests that the electrical properties of a -ZnO are different from those in w -ZnO due to structural disorder, even in the absence of impurities or grain boundaries.

AB - The electronic structure of amorphous ZnO film (a-ZnO) was examined by O K- and Zn L3-edge x-ray absorption spectroscopy and valence band photoemission spectroscopy. Comparative studies of a -ZnO and a wurtzite ZnO (w -ZnO) revealed a decrease in Zn 4s-O 2p hybridization strength and the localization of Zn 4s band as a consequence of local structural disorder, indicating limited electron hopping interactions in a -ZnO. The 0.1 eV higher Fermi-level of a -ZnO compared to w -ZnO suggests that the electrical properties of a -ZnO are different from those in w -ZnO due to structural disorder, even in the absence of impurities or grain boundaries.

UR - https://www.scopus.com/pages/publications/73649112403

U2 - 10.1063/1.3275738

DO - 10.1063/1.3275738

M3 - Journal article

AN - SCOPUS:73649112403

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 261903

ER -

Spectroscopic evidence for limited carrier hopping interaction in amorphous ZnO thin film

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