Spin-cast and patterned organophosphonate self-assembled monolayer dielectrics on metal-oxide-activated Si

Orb Acton; Daniel Hutchins; Líney Árnadóttir; Tobias Weidner; Nathan Cernetic; Guy G. Ting; Tae Wook Kim; David G. Castner; Hong Ma; Alex K.Y. Jen

doi:10.1002/adma.201004762

Spin-cast and patterned organophosphonate self-assembled monolayer dielectrics on metal-oxide-activated Si

Orb Acton
, Daniel Hutchins
, Líney Árnadóttir
, Tobias Weidner
, Nathan Cernetic
, Guy G. Ting
, Tae Wook Kim
, David G. Castner
, Hong Ma
, Alex K.Y. Jen

Department of Flexible and Printable Electronics

University of Washington

Research output: Contribution to journal › Journal article › peer-review

76 Scopus citations

Abstract

An efficient process is developed for modifying Si with self-assembled monolayers (SAMs) through in situ metal oxide surface activation and microcontact printing or spin-coating of phosphonic-acid-based molecules. The utility of this process is demonstrated by fabricating self-organized and solution-processed low-voltage organic thin-film transistors enabled by patterned and spin-cast phosphonate SAM/metal oxide hybrid dielectrics.

Original language	English
Pages (from-to)	1899-1902
Number of pages	4
Journal	Advanced Materials
Volume	23
Issue number	16
DOIs	https://doi.org/10.1002/adma.201004762
State	Published - 2011.04.26

Keywords

dielectrics
monolayers
organic field-effect transistors
patterning
self-assembly

Access to Document

10.1002/adma.201004762

Cite this

@article{2ec70228cf934296a07652d59d2ba6c9,

title = "Spin-cast and patterned organophosphonate self-assembled monolayer dielectrics on metal-oxide-activated Si",

abstract = "An efficient process is developed for modifying Si with self-assembled monolayers (SAMs) through in situ metal oxide surface activation and microcontact printing or spin-coating of phosphonic-acid-based molecules. The utility of this process is demonstrated by fabricating self-organized and solution-processed low-voltage organic thin-film transistors enabled by patterned and spin-cast phosphonate SAM/metal oxide hybrid dielectrics.",

keywords = "dielectrics, monolayers, organic field-effect transistors, patterning, self-assembly",

author = "Orb Acton and Daniel Hutchins and L{\'i}ney {\'A}rnad{\'o}ttir and Tobias Weidner and Nathan Cernetic and Ting, \{Guy G.\} and Kim, \{Tae Wook\} and Castner, \{David G.\} and Hong Ma and Jen, \{Alex K.Y.\}",

year = "2011",

month = apr,

day = "26",

doi = "10.1002/adma.201004762",

language = "English",

volume = "23",

pages = "1899--1902",

journal = "Advanced Materials",

issn = "0935-9648",

number = "16",

}

TY - JOUR

T1 - Spin-cast and patterned organophosphonate self-assembled monolayer dielectrics on metal-oxide-activated Si

AU - Acton, Orb

AU - Hutchins, Daniel

AU - Árnadóttir, Líney

AU - Weidner, Tobias

AU - Cernetic, Nathan

AU - Ting, Guy G.

AU - Kim, Tae Wook

AU - Castner, David G.

AU - Ma, Hong

AU - Jen, Alex K.Y.

PY - 2011/4/26

Y1 - 2011/4/26

N2 - An efficient process is developed for modifying Si with self-assembled monolayers (SAMs) through in situ metal oxide surface activation and microcontact printing or spin-coating of phosphonic-acid-based molecules. The utility of this process is demonstrated by fabricating self-organized and solution-processed low-voltage organic thin-film transistors enabled by patterned and spin-cast phosphonate SAM/metal oxide hybrid dielectrics.

AB - An efficient process is developed for modifying Si with self-assembled monolayers (SAMs) through in situ metal oxide surface activation and microcontact printing or spin-coating of phosphonic-acid-based molecules. The utility of this process is demonstrated by fabricating self-organized and solution-processed low-voltage organic thin-film transistors enabled by patterned and spin-cast phosphonate SAM/metal oxide hybrid dielectrics.

KW - dielectrics

KW - monolayers

KW - organic field-effect transistors

KW - patterning

KW - self-assembly

UR - https://www.scopus.com/pages/publications/79955028967

U2 - 10.1002/adma.201004762

DO - 10.1002/adma.201004762

M3 - Journal article

C2 - 21438035

AN - SCOPUS:79955028967

SN - 0935-9648

VL - 23

SP - 1899

EP - 1902

JO - Advanced Materials

JF - Advanced Materials

IS - 16

ER -

Spin-cast and patterned organophosphonate self-assembled monolayer dielectrics on metal-oxide-activated Si

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this