Abstract
Sn-doped ZnO/Ag/Sn-doped ZnO (ZAZ) multilayers prepared using sputtering process was employed in GaN-based blue light-emitting diodes(LEDs) as transparent contact layers (TCLs). The ZAZ layer had better optical and electrical properties without any thermal annealing. The ZAZ TCLs improved the current spreading on p-GaN layer and increased the light output power in the large area devices. The efficiency droop was also quite small in the case of adopting a ZAZ TCL in GaN-based LEDs. These results are promising for the development of a ZAZ TCL using sputtering process for GaN LED applications.
| Original language | English |
|---|---|
| Pages (from-to) | 72-76 |
| Number of pages | 5 |
| Journal | Materials Letters |
| Volume | 180 |
| DOIs | |
| State | Published - 2016.10.1 |
Keywords
- GaN
- LED
- Transparent contact layer
Quacquarelli Symonds(QS) Subject Topics
- Engineering - Mechanical
- Materials Science
- Physics & Astronomy
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