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Strain distributions and interband transitions of Cdx Zn1-x Te/ZnTe asymmetric double quantum dots with different degree of coupling

  • J. H. You
  • , J. T. Woo
  • , T. W. Kim
  • , K. H. Yoo
  • , H. S. Lee
  • , H. L. Park
  • Hanyang University
  • Kyung Hee University
  • Yonsei University
  • Leibniz Institute for Solid State and Materials Research Dresden

Research output: Contribution to journalJournal articlepeer-review

Abstract

Strain distributions and interband transitions of CdxZn 1-xTe/ZnTe asymmetric double quantum dots (DQDs) with different degree of coupling were calculated by using a three-dimensional finite difference method (FDM) taking into account strain and nonparabolicity effects. Bird's-eye views of the truncated contour plots of the ground state wave functions at the conduction band of the Cd0.6Zn0.4Te/ZnTe DQDs showed the transition behavior from the coupling to the decoupling behaviors with increasing ZnTe spacer layer thickness. The interband transition energies from the ground electronic subband to the ground heavy-hole band (E1 -HH1) in the CdxZn1-xTe/ZnTe DQDs, as determined from the FDM calculations, were in reasonable agreement with the experimental peaks of the temperature-dependent photoluminescence spectra corresponding to the (E1 -HH1) interband transition energies in the temperature range from 32 to 130 K.

Original languageEnglish
Article number113530
JournalJournal of Applied Physics
Volume106
Issue number11
DOIs
StatePublished - 2009

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