Strain relaxation in InxGa1-xN epitaxial films grown coherently on GaN

Seong Eun Park; O. B. Byungsung; Cheul Ro Lee

doi:10.1016/S0022-0248(02)02244-3

Strain relaxation in In_xGa_1-xN epitaxial films grown coherently on GaN

Seong Eun Park
, O. B. Byungsung^*
, Cheul Ro Lee

^*Corresponding author for this work

Information Materials Engineering

Chungnam National University

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

The strain relaxation was investigated in In_xGa_1-xN films grown pseudomorphically on GaN buffer layer. The shift of dominant peaks originated from In_0.035Ga_0.965N films which were thinner than the critical thickness was observed with the increasing film thickness. Considering the same thermal strains in all the samples, this is attributed to the relaxation of the in-plane strains that resulted from the increased common in-plane lattice constant of coherently grown-In_0.035Ga_0.965N films with the increasing thickness.

Original language	English
Pages (from-to)	455-460
Number of pages	6
Journal	Journal of Crystal Growth
Volume	249
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(02)02244-3
State	Published - 2003.03

Keywords

A1. High resolution X-ray diffraction
A1. Stresses
A1. X-ray topography
A3. Metalorganic chemical vapor deposition
B2. Semiconducting III-V materials

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Chemistry
Physics & Astronomy

Access to Document

10.1016/S0022-0248(02)02244-3

Cite this

@article{078e41dc721c40b498a17f5511d1a06e,

title = "Strain relaxation in InxGa1-xN epitaxial films grown coherently on GaN",

abstract = "The strain relaxation was investigated in InxGa1-xN films grown pseudomorphically on GaN buffer layer. The shift of dominant peaks originated from In0.035Ga0.965N films which were thinner than the critical thickness was observed with the increasing film thickness. Considering the same thermal strains in all the samples, this is attributed to the relaxation of the in-plane strains that resulted from the increased common in-plane lattice constant of coherently grown-In0.035Ga0.965N films with the increasing thickness.",

keywords = "A1. High resolution X-ray diffraction, A1. Stresses, A1. X-ray topography, A3. Metalorganic chemical vapor deposition, B2. Semiconducting III-V materials",

author = "Park, \{Seong Eun\} and Byungsung, \{O. B.\} and Lee, \{Cheul Ro\}",

year = "2003",

month = mar,

doi = "10.1016/S0022-0248(02)02244-3",

language = "English",

volume = "249",

pages = "455--460",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "3-4",

}

TY - JOUR

T1 - Strain relaxation in InxGa1-xN epitaxial films grown coherently on GaN

AU - Park, Seong Eun

AU - Byungsung, O. B.

AU - Lee, Cheul Ro

PY - 2003/3

Y1 - 2003/3

N2 - The strain relaxation was investigated in InxGa1-xN films grown pseudomorphically on GaN buffer layer. The shift of dominant peaks originated from In0.035Ga0.965N films which were thinner than the critical thickness was observed with the increasing film thickness. Considering the same thermal strains in all the samples, this is attributed to the relaxation of the in-plane strains that resulted from the increased common in-plane lattice constant of coherently grown-In0.035Ga0.965N films with the increasing thickness.

AB - The strain relaxation was investigated in InxGa1-xN films grown pseudomorphically on GaN buffer layer. The shift of dominant peaks originated from In0.035Ga0.965N films which were thinner than the critical thickness was observed with the increasing film thickness. Considering the same thermal strains in all the samples, this is attributed to the relaxation of the in-plane strains that resulted from the increased common in-plane lattice constant of coherently grown-In0.035Ga0.965N films with the increasing thickness.

KW - A1. High resolution X-ray diffraction

KW - A1. Stresses

KW - A1. X-ray topography

KW - A3. Metalorganic chemical vapor deposition

KW - B2. Semiconducting III-V materials

UR - https://www.scopus.com/pages/publications/0037363362

U2 - 10.1016/S0022-0248(02)02244-3

DO - 10.1016/S0022-0248(02)02244-3

M3 - Journal article

AN - SCOPUS:0037363362

SN - 0022-0248

VL - 249

SP - 455

EP - 460

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -